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Amorphous Silicon Based p-i-i-n Structure for Color Sensor

Published online by Cambridge University Press:  01 February 2011

S. Zhang ,
L. Raniero ,
E. Fortunato ,
L. Pereira ,
H. Águas ,
I. Ferreira  and
R. Martins
S. Zhang
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal, Phone: 351-212948524, Fax: 351-212941365, e-mail: sz@uninova.pt
L. Raniero
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal, Phone: 351-212948524, Fax: 351-212941365, e-mail: sz@uninova.pt
E. Fortunato
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal, Phone: 351-212948524, Fax: 351-212941365, e-mail: sz@uninova.pt
L. Pereira
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal, Phone: 351-212948524, Fax: 351-212941365, e-mail: sz@uninova.pt
H. Águas
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal, Phone: 351-212948524, Fax: 351-212941365, e-mail: sz@uninova.pt
I. Ferreira
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal, Phone: 351-212948524, Fax: 351-212941365, e-mail: sz@uninova.pt
R. Martins
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal, Phone: 351-212948524, Fax: 351-212941365, e-mail: sz@uninova.pt
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Abstract

This work deals with the study of the role of the film thickness and composition on the color selectivity of the collecting spectrum of glass/ZnO:Ga/p-a-Si1-xCx:H/ a-Si1-xCx:H /a-Si:H/n-a-Si:H/Al photoelectronic detectors produced in a single chamber plasma enhanced chemical vapor deposition (PECVD) system. The cross contaminations were minimized by a rotate-cover substrate holder system. The devices can detect the blue illumination at small reverse bias and detect red illumination at large reverse bias. The role of the process parameters, especially the thickness of the p-type and intrinsic a-Si1-xCx:H, and the intrinsic a-Si:H layers on the device performances were studied in detail aiming to achieve a better detectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A9.5
Copyright
Copyright © Materials Research Society 2005

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