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Amorphous Hydrogenated Silicon Carbide Prepared from DC-Biased RF-Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

Hsueh Yi Lu  and
Mark A. Petrich
Hsueh Yi Lu
Affiliation:
Department of Chemical Engineering, Northwestern University, Evanston, Illinois 60208
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, Northwestern University, Evanston, Illinois 60208
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Abstract

We present evidence that an independently applied dc bias voltage has a significant effect on the plasma deposition of amorphous hydrogenated silicon carbide. Deposition rates increase with either positive or negative dc voltages applied to the powered rf electrode. The microstructure of the films (as determined by infrared absorption) can be reduced by increasing the plasma potential (positive dc bias voltages). Negative dc biases, or excessively high positive biases, result in increased amounts of film microstructure. Film carbon content is increased when positive biases are applied, but the optical band gaps decrease suggesting increased amounts of graphitic bonding configurations. Negative biases do not change the carbon content of the films, but do increase both deposition rate and microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 745
Copyright
Copyright © Materials Research Society 1991

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