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Airplane and Drop Experiments on Crystallization of InxGa1-xSb Semiconductor under Different Gravity Conditions

Published online by Cambridge University Press:  21 March 2011

Krishnan Balakrishnan
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432–8011, Japan.
Yasuhiro Hayakawa
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432–8011, Japan.
Hideki Komatsu
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432–8011, Japan.
Noriaki Murakami
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432–8011, Japan.
Tetsuo Nakamura
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432–8011, Japan.
Tadashi Kimura
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432–8011, Japan.
Tetsuo Ozawa
Affiliation:
Dept. of Electrical Eng., Shizuoka Inst. of Sci. & Tech., Fukuroi 437–8555, Japan.
Yasunori Okano
Affiliation:
Faculty of Eng., Shizuoka University, Hamamatsu 432–8561, Japan.
Masafumi Miyazawa
Affiliation:
Faculty of Eng., Shizuoka University, Hamamatsu 432–8561, Japan.
Sadik Dost
Affiliation:
Dept. of Mech. Eng., University of Victoria, Victoria, BC, Canada V8W 3P6.
Le. H. Dao
Affiliation:
Adv. Mat. Res. Lab., Univ. du Quebec, INRS, Verennes, Qubec, Canada J3XIS2.
Masashi Kumagawa
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432–8011, Japan.
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Abstract

Melting and crystallization experiments of InGaSb were done under the reduced gravity condition (10–2G) in an airplane and at the normal gravity condition (1G) in the laboratory. Crystallized InGaSb was found to contain many needle crystals in both the cases. Reduced gravity condition was found to be more conducive for crystal growth than the normal gravity condition. Formation of spherical projections on the surface of InGaSb during its crystallization was in-situ observed using a high speed CCD camera in the drop experiment. Spherical projections showed dependence of gravity during its growth. Indium compositions in the spherical projections were found to vary depending on the temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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Airplane and Drop Experiments on Crystallization of InxGa1-xSb Semiconductor under Different Gravity Conditions
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