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Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  03 September 2012

T. Gehrke
Affiliation:
Materials Research Center North Carolina State University Box 7919 Raleigh, NC 27695-7919
K. J. Linthicum
Affiliation:
Materials Research Center North Carolina State University Box 7919 Raleigh, NC 27695-7919
P. Rajagopal
Affiliation:
Materials Research Center North Carolina State University Box 7919 Raleigh, NC 27695-7919
E. A. Preble
Affiliation:
Materials Research Center North Carolina State University Box 7919 Raleigh, NC 27695-7919
R. F. Davis
Affiliation:
Materials Research Center North Carolina State University Box 7919 Raleigh, NC 27695-7919
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Abstract

Growth of GaN and AlxGa1−xN thin films on 6H-SiC(0001) and Si(111) substrates with low densities of defects using the PENDEO™ process and the characterization of the resulting materials are reported. The application of a mask on the GaN seed structures hinders the vertical propagation of threading dislocations of the seed material during regrowth, but introduces a misregistry in the overgrowing material resulting in low quality crystal growth. This misregistry has been eliminated due to advanced processing and the exclusion of the masking layer. The new generation of samples do not show any misregistry, as shown by transmission electron microscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
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Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
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Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
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