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Advanced PECVD-Based Anti-Reflective Coating for 90nm Generation Interconnects

Published online by Cambridge University Press:  11 February 2011

Sang H. Ahn
Affiliation:
PECVD/DSM/Applied Materials Inc. Santa Clara, CA 95054
Miguel Fung
Affiliation:
PECVD/DSM/Applied Materials Inc. Santa Clara, CA 95054
Keebum Jung
Affiliation:
PECVD/DSM/Applied Materials Inc. Santa Clara, CA 95054
Lei Zhu
Affiliation:
PECVD/DSM/Applied Materials Inc. Santa Clara, CA 95054
Chris Bencher
Affiliation:
PECVD/DSM/Applied Materials Inc. Santa Clara, CA 95054
B H Kim
Affiliation:
PECVD/DSM/Applied Materials Inc. Santa Clara, CA 95054
Hichem M'Saad
Affiliation:
PECVD/DSM/Applied Materials Inc. Santa Clara, CA 95054
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Abstract

A plasma-enhanced chemical vapor deposition-based nitrogen-free dielectric anti-reflective coating was successfully developed for use in 90nm interconnects in conjunction with low κ materials. By choosing N-free precursors, it was possible to eliminate any adverse interactions between the NH2 amine group and the DUV 193nm photoresist that is directly in contact with the anti-reflective coating (ARC), thus eliminating major source of photoresist poisoning-induced footing. N-free dielectric ARC demonstrated a wide tunable range of its optical properties at 193nm in a single wafer PECVD reactor: 1.6<n<1.9 and 0< k<1.1. This range enables cost-effective and in-situ deposition of a dual-layer dielectric ARC on the low λ dielectric layers during the dual damascene process. The dual-layer coating, which consists of a phase-shift layer on an absorbing layer, can keep the substrate reflectivity below 1% across the wafer, minimizing CD swing. N-Free dielectric ARC can be easily integrated with low κ dielectrics. Its adhesion with low κ materials is excellent and it can be etched and chemically and mechanically polished together with low κ dielectrics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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