Hostname: page-component-6b989bf9dc-476zt Total loading time: 0 Render date: 2024-04-14T09:20:37.701Z Has data issue: false hasContentIssue false

Advanced GaSb/InGaAsSb/AlGaAsSb 2-2.4µm Photovoltaic Detectors

Published online by Cambridge University Press:  10 February 2011

T.T. Piotrowski
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
E. Kaminska
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
K. Golaszewska
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
E Papis
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
M Piskorski
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
W Jung
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
J Katcki
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
A. Kudla
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, ttpiotr@ite.waw.pl
J. Adamczewska
Affiliation:
Institute of Physics PAS, Al. Lotników 46, 02-668 Warsaw, Poland
J. Piotrowski
Affiliation:
VIGO Systems Ltd. ul. Swietlików 3, 01-389 Warsaw, Poland, jpiotr@pol. pl
Z. Nowak
Affiliation:
VIGO Systems Ltd. ul. Swietlików 3, 01-389 Warsaw, Poland, jpiotr@pol. pl
Z. Orman
Affiliation:
VIGO Systems Ltd. ul. Swietlików 3, 01-389 Warsaw, Poland, jpiotr@pol. pl
J. Pawluczyk
Affiliation:
VIGO Systems Ltd. ul. Swietlików 3, 01-389 Warsaw, Poland, jpiotr@pol. pl
Get access

Abstract

This paper reports on the design and fabrication of GaSb/n-InxGal1−xAsySb1−y/p-AlxGal−xAsySb1−y heterojuction photodetectors operating in the 2 - 2.4 µm wavelength region. Device structures were grown by LPE and fabricated as mesa-type diodes by RIE etching in CC14/H2 plasma. For mesa passivation a surface treatment in (NH42S water solution was carried out. The photodiodes structures are characterized by differential resistance RoA=400 ωcm2. Measured detectivity is in the range 3.1010 - 2. 1011 cmHz1/2/W, in dependence on the active area and cutoff wavelength.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Piskorski, M., Adcamczewska, J., Golaszewska, K., Piotrowski, T.T., Electron Technology 29, 351 (1996).Google Scholar
2. Tournie, E., Pitard, F., Joullie, A., J. Cryst. Growth 109, 683 (1990).Google Scholar
3. Kobayashi, N., Horikoshi, Y., Uemura, C., Jpn. J. Appl. Phys. 18, 2183 (1979).Google Scholar
4. Karouta, K., Morbeuf, A., Joulie, A., Fan, J.K., J. Cryst. Growth 79,445 (1986).Google Scholar
5. Piotrowski, J. and Gawron, W., Infrared Physics and Technology 38, 63 (1997).Google Scholar
6. Casselman, T. N. and Petersen, P. E.; Solid State Communications 33, 615 (1980).Google Scholar
7. Gelmont, B., Sokolova, Z. N and Jasiewich, I. N., Physika i Technika Poluprovodnikov 16, 592 (1982).Google Scholar
8. Anderson, W. W.; Infrared Physics. 20, 363 (1980).Google Scholar
9. Lin, C.L., Su, Y.K., Se, T.S., Li, W.L., Jpn. J. Appl. Phys., 37, L1543 (1998).Google Scholar
10. Żytkiewicz, Z.R., Dobaczewski, L., Gomez, D., Briones, F., Acta Phys. Polonica A, 92, 1083 (1997).Google Scholar
11. Piotrowski, J., Galus, W., and Grudzień, M., Infrared Phys. 31, 1 (1991).Google Scholar