Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-23T23:10:21.145Z Has data issue: false hasContentIssue false

Adjustable Threshold a-Si/SiC:H Color Detectors

Published online by Cambridge University Press:  15 February 2011

Giampiero de Cesare
Affiliation:
Dipartimento di Ingegneria Elettronica, Università “La Sapienza” Via Eudossiana 18, 00184 Roma, (Italy)
Fernanda Irrera
Affiliation:
Dipartimento di Ingegneria Elettronica, Università “La Sapienza” Via Eudossiana 18, 00184 Roma, (Italy)
Francesco Lemmi
Affiliation:
Dipartimento di Ingegneria Elettronica, Università “La Sapienza” Via Eudossiana 18, 00184 Roma, (Italy)
Fabrizio Palmamario Tucci
Affiliation:
Dipartimento di Ingegneria Elettronica, Università “La Sapienza” Via Eudossiana 18, 00184 Roma, (Italy)
Get access

Abstract

We present the Adjustable Threshold Color Detectors (ATCDs) based on stacked heterojunctions of amorphous silicon (a-Si:H) and silicon carbide (a-SiC:H). These devices work as bias-controlled photocurrent sources with different values of the voltage threshold depending on the wavelength of the incident radiation. The ATCDs detect the three fundamental chromatic components (blue, green, red) by varying the external voltage within a few Volts.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Street, R. A., Fiijieda, I., Wu, X. D., Nelson, S., Nylen, P., MRS Symp. Proc., 336, 873 (1994)Google Scholar
[2] Zhu, Q., Stiebig, H., Rieve, P., Fisher, H., Bohm, N., MRS Symp. Proc., 336, 843 (1994)Google Scholar
[3] Fang, Y.K., Hwang, S.B., Chen, Y.W., Kuo, L.C., IEEE-Electron Device Lett., 12, 172 (1991)Google Scholar
[4] de Cesare, G., Irrera, F., Lemmi, F., Palma, F., IEEE-Trans. Electr. Devices, 42, No 5, May 1995 Google Scholar
[5] de Cesare, G., Irrera, F., Lemmi, F., Palma, F., Appl. Phys. Lett., 66, No 10, 1178, 1995 Google Scholar
[6] Chang, C. Y., IEEE Trans. Electron Devices, 33, 1829 (1986)Google Scholar
[7] Masini, G., Caputo, D., de Cesare, G., Dobosz, A., Palma, F., J. of Non-Cryst. Solids, 164&166, 805, (1993)Google Scholar