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Accurate models for the current-voltage characteristics of vertically compressed piezo-semiconductive quasi-1D NWs

Published online by Cambridge University Press:  18 June 2013

Rodolfo Araneo*
Affiliation:
DIAEE - Sapienza University of Rome, Via Eudossiana 18, 00184, Rome
Giampiero Lovat
Affiliation:
DIAEE - Sapienza University of Rome, Via Eudossiana 18, 00184, Rome
Christian Falconi
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133, Rome CNR IDASC, Via Fosso del Cavaliere, 100, 00133 Rome, Italy
Andrea Notargiacomo
Affiliation:
Institute of Photonics and Nanotechnology – CNR, Via Cineto Romano 42, 00156, Rome , Italy
Antonio Rinaldi
Affiliation:
University of L'Aquila, International Research Center for Mathematics & Mechanics of Complex System (MEMOCS), Via S. Pasquale, 04012, Cisterna di Latina (LT), Italy ENEA ,C.R. Casaccia, Via Anguillarese 301, Santa Maria di Galeria, 00123, Rome, Italy
*
*Email: rodolfo.araneo@uniroma1.it
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Abstract

We investigate the electrical transport in quasi-1D piezo-semiconductive NWs under purely vertical compressive or tensile strains. For simplicity, we exclusively consider the additional band bending originated by the piezoelectric charges assumed to be distributed, with a constant volumic density, within a maximum distance δpiezo 003F from the metal-to-NW junction. Our calculations demonstrate that the carrier concentration, the energy conduction band profile and the I-V characteristics significantly depend on δpiezo 003F . We therefore propose that I-V measurements can allow to obtain information on δpiezo 003F in strained piezo-semiconductors.

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Copyright
Copyright © Materials Research Society 2013 

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References

Araneo, R., Lovat, G., Burghignoli, P., Falconi, C., Advanced Materials, 24, 47194724 (2012).CrossRef
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Accurate models for the current-voltage characteristics of vertically compressed piezo-semiconductive quasi-1D NWs
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