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400-nm Band AlGaInN-Based High Power Laser Diodes

Published online by Cambridge University Press:  21 March 2011

Takeharu Asano
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Motonobu Takeya
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Tsuyoshi Tojyo
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Shinro Ikeda
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Takashi Mizuno
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Shinichi Ansai
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Shu Goto
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Satoru Kijima
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Tomonori Hino
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Shiro Uchida
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
Masao Ikeda
Affiliation:
Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagi-ken, 989-0734, Japan
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Abstract

High-power AlGaInN-based laser diodes (LDs) operating with high reliability in the 400-nm band have been successfully fabricated using a high-productivity process. Epitaxial lateral overgrowth (ELO) over a 10-m m region was employed to obtain a broad growth area with low dislocation density, and the thickness of the ELO-GaN layer was limited to approximately 5 m in order to minimize wafer bending. These techniques allow for the easy and reproducible alignment of the laser stripe on the region of low dislocation density. The insertion of a GaInN interlayer between the active layer and the AlGaN electron blocking layer was effective for reducing the strain between these two layers, resulting in homogeneous luminescence from the active layer and lower operating current. A mean time to failure of 15000 h under 30-mW continuous-wave operation at 60°C was realized as a direct result of the lower operating current. Productivity was remarkably improved by performing epitaxial growth on a 3-inch substrate. Highly uniform laser wafers were successfully fabricated by achieving minimal temperature variation (1000 ±7°C) over the 3-inch substrate. The resultant laser structures varied in thickness by only ±5%, and the photoluminescence wavelength was consistent within ±2.5 nm over the entire 3-inch substrate. The average threshold current of 550 LDs selected from a fourth wafer was 32.7 mA, with small standard deviation of 3.2 mA.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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