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3D Arrays of Quantum Dots for Laser Applications

Published online by Cambridge University Press:  10 February 2011

N.N. Ledentsov
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D–10623 Berlin, Germany on leave from A.F.Ioffe Physical Technical Institute
J. Böhrer
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D–10623 Berlin, Germany
D. Bimberg
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D–10623 Berlin, Germany
S.V. Zaitsev
Affiliation:
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St.Petersburg, Russia
V.M. Ustinov
Affiliation:
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St.Petersburg, Russia
A.YU. Egorov
Affiliation:
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St.Petersburg, Russia
A.E. Zhukov
Affiliation:
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St.Petersburg, Russia
M.V. Maximov
Affiliation:
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St.Petersburg, Russia
P.S. Kop'ev
Affiliation:
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St.Petersburg, Russia
ZH.I. Alferov
Affiliation:
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St.Petersburg, Russia
A.O. Kosogov
Affiliation:
Max-Planck-Institut f¨r Mikrostrukturphysik, Weinberg 2, D–06120 Halle, Germany on leave from A.F.Ioffe Physical Technical Institute
U. Gösele
Affiliation:
Max-Planck-Institut f¨r Mikrostrukturphysik, Weinberg 2, D–06120 Halle, Germany
S.S. Ruvimov
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720 on leave from A.F.Ioffe Physical Technical Institute
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Abstract

We have fabricated and studied injection lasers based on vertically coupled quantum dots (VECODs). VECODs are self-organized during alternate short-period GaAs-InAs (InGaAs) depositions after InAs (or InGaAs) pyramids are formed on a GaAs (100). The resulting arrangement represents laterally ordered array of nanoscale structures inserted in a GaAs matrix, where each structure is composed of several vertically merging InAs (or InGaAs) parts. VECODs are introduced in the active region of GaAs-AlGaAs double heterostructure laser. The threshold current density remarkably decreases with increase in number of periods (N) of the VECOD (down to 90 A cm-2 at 300K for N=10). The differential efficiency increases with N and the lasing occurs through ground state of quantum dot exciton up to room temperature (λ=1.05 μm).

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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