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Ab initio studies of electronic structure of defects on the Te sites in PbTe

Published online by Cambridge University Press:  01 February 2011

Salameh Ahmad ,
S. D. Mahanti  and
M. G. Kanatzidis
Salameh Ahmad
Affiliation:
ahmad@pa.msu.edu, Michigan State University, 4261 BioMedical & Physical Sciences, East Lansing, Michigan, 48823, United States
S. D. Mahanti
Affiliation:
mahanti@pa.msu.edu, Michigan State University, Physics and Astronomy, United States
M. G. Kanatzidis
Affiliation:
kanatzid@cem.msu.edu, Michigan State University, Department of Chemistry, United States
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Abstract

Ab initio electronic structure calculations have been carried out to understand the nature of anionic defect states in PbTe. We find that Te vacancies strongly perturb the electronic density of states (DOS) near the band gap region. New states of predominantly Pb p character appear in the band gap. Iodine is an ideal substitutional defect and a donor. Sulpher and Selenium do not affect the states near the conduction band minimum but suppress the DOS near the valence band maximum. These results have important implications on the thermoelectric properties of PbTe and PbTexM1−x (M=S, Se) ternary systems.

Keywords

defectselectronic structuresemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F04-11
Copyright
Copyright © Materials Research Society 2006

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References

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