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4-Point Resistance Measurements of Individual Bi Nanowires

Published online by Cambridge University Press:  17 March 2011

Stephen B. Cronin
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
Yu-Ming Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
Pratibha L. Gai
Affiliation:
DuPont Central Research and Development, Wilmington, DE 19880
Oded Rabin
Affiliation:
Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139
Marcie R. Black
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
Gene Dresselhaus
Affiliation:
Francis Bitter Magnet Laboratory, and Massachusetts Institute of Technology, Cambridge, MA 02139
Mildred S. Dresselhaus
Affiliation:
on leave from the Massachusetts Institute of Technology, Cambridge, MA 02139

Abstract

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We have synthesized single crystal bismuth nanowires by pressure injecting molten Bi into anodic alumina templates. By varying the template fabrication conditions, nanowires with diameters ranging from 10 to 200nm and lengths of ~50[.proportional]m can be produced. We present a scheme for measuring the resistance of a single Bi nanowire using a 4-point measurement technique. The nanowires are found to have a 7nm thick oxide layer which causes very high contact resistance when electrodes are patterned on top of the nanowires. The oxide is found to be resilient to acid etching, but can be successfully reduced in high temperature hydrogen and ammonia environments. The reformation time of the oxide in air is found to be less than 1 minute. Focused ion beam milling is attempted as an alternate solution to oxide removal.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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