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32nm Node Highly Reliable Cu/Low-k Integration Technology with CuMn Alloy Seed

Published online by Cambridge University Press:  10 August 2011

Shaoning Yao ,
Vincent McGahay ,
Matthew S. Angyal ,
Andrew H. Simon ,
Tom C. Lee ,
Cathryn Christiansen ,
Baozhen Li ,
Fen Chen ,
Paul S. McLaughlin  and
Oluwafemi O. Ogunsola
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Shaoning Yao
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
Vincent McGahay
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
Matthew S. Angyal
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
Andrew H. Simon
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
Tom C. Lee
Affiliation:
IBM Microelectronics, Essex Junction, VT 05452
Cathryn Christiansen
Affiliation:
IBM Microelectronics, Essex Junction, VT 05452
Baozhen Li
Affiliation:
IBM Microelectronics, Essex Junction, VT 05452
Fen Chen
Affiliation:
IBM Microelectronics, Essex Junction, VT 05452
Paul S. McLaughlin
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
Oluwafemi O. Ogunsola
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
Stephan Grunow
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
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Abstract

This paper introduces a highly reliable Cu interconnect technology at the 32 nm node with CuMn alloy seed. A CuMn alloy liner seed process combined with a non-gouging liner has been integrated into the minimum-pitch wiring level. Stress migration fails with CuMn seed at plate-below-via structures were shut down by a non-gouging liner process. Integration with gouging liner and non-gouging liner is compared, and results of interaction with CuMn seed are discussed in this paper.

Keywords

MnCuelectromigration
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1335: Symposium O – Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics , 2011 , mrss11-1335-o06-02
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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