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3.2 AND 3.8 μm Emission and Lasing in AlGaAsSb/InGaAsSb Double Heterostructures with Asymmetric Band Offset Confinements

Published online by Cambridge University Press:  10 February 2011

M. P. Mikhailova ,
B. E. Zhurtanov ,
K. D. Moiseev ,
A. N. Imenkov ,
O. G. Ershov  and
Yu. P. Yakovlev
M. P. Mikhailova
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
B. E. Zhurtanov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
K. D. Moiseev
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
A. N. Imenkov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
O. G. Ershov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
Yu. P. Yakovlev
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
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Abstract

We report the first observations of electroluminescence (EL) and lasing in laser structures with high Al-content (x=0.64, Eg=1.474 eV) cladding layers and a narrow-gap InGaAsSb active layer (Eg=0.326 eV at T=77K). The structures are LPE-grown lattice-matched to GaSb substrate. Band energy diagrams of the laser structures had strongly asymmetric band offsets. The heterojunction between high Al-content layer and InGaAsSb narrow-gap active layer has a type II broken-gap alignment at 300K. In this laser structure spontaneous emission was obtained at λ=3.8μm at T=77K and λ=4.25 μm at T=300K. Full width at half maximum (FWHM) of emission band was 34 meV. Emission intensity decreased by a factor of 30 from T=77K to 300K. Lasing with single dominant mode was achieved at λ=3.774 μm (T=80K) in pulsed mode. Threshold current as low as 60 mA and characteristic temperature T0=26K were obtained at T=80–120K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 101
Copyright
Copyright © Materials Research Society 1998

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References

1. Choi, H.K., Turner, G.W. Appl.Phys.Lett. 67, 332 (1995)Google Scholar
2. Danilova, T.N., Imenkov, A.N., Ershov, O.G., Stepanov, M V., Sherstnev, V.V., Yakovlev, Yu.P. Semiconductors, 29 (7), 667 (1995)Google Scholar
3. Choi, H.K., Turner, G.W., Eglash, S.Y. IEEE Photonics Technol. Lett., 6, 7 (1994)Google Scholar
4. Yakovlev, Yu.P., Mikhailova, M.P., Zegrya, G.G., Moiseev, K.D., Ershov, O.G. Techn.Digest CLEO-96, USA, Anaheim CA, 2–7 June 1996, p. 170 Google Scholar
5. Choi, H.K., Tumer, G.W., Liau, Z.L. Appl.Phys.Lett. 65, 2251 (1994)Google Scholar
6. Kazarinov, R.I., Belenky, G.L. IEEE J.Quant.Electr., 31 423 (1995)Google Scholar
7. Wong, K.B., Gopir, G.K.A., Hagon, Y.P., Yaros, M. Semicond.Sci.Technol., 9, 2210 (1994)Google Scholar
8. Mikhailova, M.P., Andreev, I.A., Voronina, T.I., Lagunova, T.S., Moiseev, K.D., Yakovlev, Yu.P. Semiconductors, 29 (4), 353 (1995)Google Scholar
9. Mikhailova, M.P., Moiseev, K.D., Zegrya, G.G., Yakovlev, Yu.P. Solid State Electr. 40 (8), 673 (1996)Google Scholar
10. Ideshita, S., Furukawa, A., Mochizuki, Y., Mizuta, M. Appl.Phys.Lett. 60, 2549 (1992)Google Scholar