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{224} Plane X-Ray Diffraction Study of GaAs on Si Wafers Using a Conventional Double Crystal Diffractometer

Published online by Cambridge University Press:  28 February 2011

J.W. Lee ,
D.K. Bowen  and
J.P. Salerno
J.W. Lee
Affiliation:
Kopin Corporation, GaAs R&D Laboratory, 695 Myles Standish Blvd., Taunton, MA 02780
D.K. Bowen*
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139
J.P. Salerno
Affiliation:
Kopin Corporation, GaAs R&D Laboratory, 695 Myles Standish Blvd., Taunton, MA 02780
*
** Permanent address: Department of Engineering, University of Warwick, Coventry, UK.
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Abstract

In an effort to evaluate the near surface crystal quality of GaAs on Si wafers, {224} plane diffraction were investigated using a conventional double crystal x-ray diffractometer without any high intensity radiation source. The x-ray incident angle to wafer surface varied from 3.6 to 9.6 degrees for different {224} planes due to the substrate tilt angle of 3 degrees. The GaAs to Si rocking curve intensity ratio increased significantly as the incident angle decreased. For the diffraction with 3.6 degree incident angle, only the GaAs peak was detected from the 3.5 um thick GaAs on Si wafer and the GaAs peak became narrower. These indicates that this conventional x-ray diffraction technique is applicable for the near surface quality evaluation of GaAs on Si wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 193
Copyright
Copyright © Materials Research Society 1987

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References

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