Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-17T02:38:55.408Z Has data issue: false hasContentIssue false
  • English
  • Français

1Improvement of Thick a-Si Radiation Detectors by Field Profile Tailoring

Published online by Cambridge University Press:  21 February 2011

J.S. Drewery ,
G. Cho ,
T. Jing ,
S.N. Kaplan ,
A. Mireshghi ,
V. Perez-Mendez  and
D. Wildermuth
J.S. Drewery
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
S.N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
A. Mireshghi
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
D. Wildermuth
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
Get access

Abstract

Application of thick (∼50 μm) a-Si p-i-n diodes as a direct radiation detector for minimum ionizing particles is hampered by the need to apply large bias voltages in order fully to deplete the detecting intrinsic layer, which typically contains 5–10×1014 ionizable dangling bonds per cm3. By insertion of thin p-type layers at intervals within the intrinsic layer, the required depletion voltage can be reduced by a factor of at least 1/(n+1) where n is the number of layers inserted. This principle is demonstrated for devices approximately 12μm in thickness. It is shown that electron losses within the p type layer can be kept to minimum by choice of a low doping concentration for the introduced p layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1063
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Perez-Mendez, V., Cho, G., Fujieda, I., Kaplan, S.N., Qureshi, S., and Street, R.A. : Mat. Res. Soc. Symp. Proc 14 9 p.621 (1989)Google Scholar
[2] Qureshi, S., Perez-Mendez, V., Kaplan, S.N., Fujieda, I., Cho, G., and Street, R.A. : IEEE Trans. Nuc. Sci. NS–36 p.194 (1989)Google Scholar
[3] Drewery, J. S., Cho, G., Fujieda, I., Jing, T., Kaplan, S.N., Perez-Mendez, V., Wildermuth, D. and Street, R.A. : Nucl. Instr. Meth. A310 p.167(1991)Google Scholar
[4] Street, R.A. : Appl. Phys. Lett. 41 p.1060 (1982)Google Scholar
[5] Stutzmann, M. : Mat Res. Soc. Symp. Proc 70 p.203 (1986)CrossRefGoogle Scholar
[6] Robertson, J. : Phys. Rev. B 31 p.3817 (1985)Google Scholar