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1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

Published online by Cambridge University Press:  10 February 2011

Ray Murray ,
Caroline Bryan ,
Chris Button ,
D. Spikes  and
G. Hill
Ray Murray
Affiliation:
Center for Electronic Materials and Devices, Imperial College, London, UK
Caroline Bryan
Affiliation:
Center for Electronic Materials and Devices, Imperial College, London, UK
Chris Button
Affiliation:
Department of Electrical and Electronic Engineering, University of Sheffield, Sheffield, UK
D. Spikes
Affiliation:
Center for Electronic Materials and Devices, Imperial College, London, UK
G. Hill
Affiliation:
Department of Electrical and Electronic Engineering, University of Sheffield, Sheffield, UK
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Abstract

Self-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 159
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. , Arakawa and Sakaki, S., Appl.Phys.Lett. 40, 939 (1982)10.1063/1.92959Google Scholar
2. Asada, M., Miyamoto, Y. and Suematsu, Y., IEEE J.Quantum Elec., QE–22, 1915 (1986)10.1109/JQE.1986.1073149Google Scholar
3. , Blakenov, Nie, H., Anshelm, K.A., Campbell, J.C. and Streetman, B.G., Electron. Lett. 34, 694 (1998)10.1049/el:19980487Google Scholar
4. Gray, J.W., Childs, D., Malik, S., Siverns, P., Roberts, C., Stavrinou, P.N., Whitehead, M., Murray, R. and Parry, G., Electron. Lett. 35, 242 (1999)10.1049/el:19990114Google Scholar
5. Huffaker, D.L., and Deppe, D.G., Appl.Phys.Lett., 73, 520 (1998)10.1063/1.121920Google Scholar
6. Taskinen, M., Sopanen, M., Lipsanen, H., Tulkki, J. and Ahopelto, J., Surface Science, 376, 60 (1997)10.1016/S0039-6028(96)01597-XGoogle Scholar
7. Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G. and Viktrovitch, P., J.Vac.Sci.Technol., B12, 2299 (1994)10.1116/1.587756Google Scholar
8. Siverns, P., Malik, S., McPherson, G., Childs, D., Roberts, C., Murray, R., Joyce, B.A. and Davock, H., Phys.Rev. B 58, R10127 (1998)10.1103/PhysRevB.58.R10127Google Scholar
9. Ponchet, A., Corre, A. Le, L'Haridon, H., Lambert, B. and Salatin, S., Appl.Phys.Lett. 67,1850 (1995)10.1063/1.114353Google Scholar
10. Murray, R., Childs, D., Malik, S., Roberts, C., Siverns, P., Hartmann, J-M and Stavrinou, P., Jpn.J.Appl.Phys., 38, 2022 (1999)Google Scholar
11. Malik, S., Roberts, C., Murray, R. and Pate, M., Appl.Phys.Lett., 71, p. 1987 (1997)10.1063/1.119763Google Scholar
12. Fréchengues, S., Drouot, V., Lemoine, D., Loualiche, S., Corre, A. Le and L'Haridon, H., Appl.Phys.Lett., 71, 2818 (1997)10.1063/1.120145Google Scholar