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10 Tbit/inch2 Ferroelectric Data Storage with Offset Voltage Application Method
Published online by Cambridge University Press: 26 February 2011
Abstract
Ferroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch2 was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-42
- Copyright
- Copyright © Materials Research Society 2006