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Spatial control of the threshold voltage of low-voltage organic transistors by microcontact printing of alkyl- and fluoroalkyl-phosphonic acids

Published online by Cambridge University Press:  31 August 2011

Ikue Hirata ,
Ute Zschieschang ,
Frederik Ante ,
Tomoyuki Yokota ,
Kazunori Kuribara ,
Tatsuya Yamamoto ,
Kazuo Takimiya ,
Masaaki Ikeda ,
Hirokazu Kuwabara  and
Hagen Klauk
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Ikue Hirata
Affiliation:
School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
Ute Zschieschang
Affiliation:
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Frederik Ante
Affiliation:
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Tomoyuki Yokota
Affiliation:
School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
Kazunori Kuribara
Affiliation:
School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
Tatsuya Yamamoto
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8527, Japan
Kazuo Takimiya
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8527, Japan
Masaaki Ikeda
Affiliation:
Functional Chemicals RD Laboratories, Nippon Kayaku Co., Ltd., Kita, Tokyo 115-8588, Japan
Hirokazu Kuwabara
Affiliation:
Functional Chemicals RD Laboratories, Nippon Kayaku Co., Ltd., Kita, Tokyo 115-8588, Japan
Hagen Klauk
Affiliation:
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Tsuyoshi Sekitani
Affiliation:
School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
Takao Someya*
Affiliation:
School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan; Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro-ku, Tokyo 153-8505, Japan
*
Address all correspondence to Takao Someya atsomeya@ee.t.u-tokyo.ac.jp
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Abstract

Low-voltage-driven organic thin-film transistors (organic TFTs) with spatially controlled threshold voltages (−1.2 and −0.36 V) were fabricated for the first time. Using the microcontact printing method, tetradecylphosphonic acid (HC14-PA) and pentadecylfluoro-octadecylphosphonic acid (FC18-PA) were transferred to form ultrathin layers in different regions on a substrate. Together with plasma-grown aluminum oxide (AlOx) layer, the stamped layers were shown to have equal insulating ability as the dipped method monolayer. The feasibility of the area-selective stamping method was displayed using locally controlled inverter circuits. The shift of turn-on voltage for those transistors was consistent with the threshold voltage shift of the transistors.

Type
Rapid Communications
Information
MRS Communications , Volume 1 , Issue 1 , November 2011 , pp. 33 - 36
Copyright
Copyright © Materials Research Society 2011

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