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Robust resistive switching performance of pulsed laser deposited SiC/Ag/SiC tri-layer thin films deposited on a glass substrate

Published online by Cambridge University Press:  15 May 2020

Koppole Kamakshi ,
J.P.B. Silva ,
N.S. Kiran Kumar ,
K.C. Sekhar Open the ORCID record for K.C. Sekhar [Opens in a new window]  and
M. Pereira
Koppole Kamakshi
Affiliation:
Department of Science and Humanities, Indian Institute of Information Technology Tiruchirappalli, Tiruchirappalli, Tamil Nadu620015, India
J.P.B. Silva
Affiliation:
Centre of Physics, University of Minho, Campus de Gualtar, Braga4710-057, Portugal
N.S. Kiran Kumar
Affiliation:
Department of Physics, School of Basic and Applied Sciences, Central University of Tamil Nadu, Thiruvarur610101, India
K.C. Sekhar*
Affiliation:
Department of Physics, School of Basic and Applied Sciences, Central University of Tamil Nadu, Thiruvarur610101, India
M. Pereira
Affiliation:
Centre of Physics, University of Minho, Campus de Gualtar, Braga4710-057, Portugal
*
Address all correspondence to K.C. Sekhar at sekhar.koppole@gmail.com
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Abstract

In this work, the authors developed SiC(10 nm)/Ag/SiC(10 nm) thin films showing an electroforming-free resistive switching (RS) effect with a switching ratio of 102. The observed RS effect is attributed to charging and discharging of Ag nanoparticles in the film layer. Further, SiC/Ag/SiC film shows an excellent endurance and retention as well as a good thermal stability of RS characteristics. It is also identified that the switching ratio is invariant but the switching voltage of the device greatly depends on the Ag nanoparticles concentration and the operation temperature of the device. Therefore, SiC/Ag/SiC thin films are attractive for next-generation memory devices with enhanced durability.

Type
Research Letters
Information
MRS Communications , Volume 10 , Issue 2 , June 2020 , pp. 353 - 358
Copyright
Copyright © Materials Research Society, 2020

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