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Investigation of carrier transfer mechanism of NiO-loaded n-type GaN photoanodic reaction for water oxidation by comparison between band model and optical measurements

Published online by Cambridge University Press:  26 April 2018

Kayo Koike ,
Takenari Goto ,
Shinichiro Nakamura ,
Satoshi Wada  and
Katsushi Fujii Open the ORCID record for Katsushi Fujii [Opens in a new window]
Kayo Koike
Affiliation:
RIKEN Center for Advanced Photonics, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Takenari Goto
Affiliation:
RIKEN Innovation Center, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Shinichiro Nakamura
Affiliation:
RIKEN Innovation Center, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Satoshi Wada
Affiliation:
RIKEN Center for Advanced Photonics, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Katsushi Fujii*
Affiliation:
RIKEN Center for Advanced Photonics, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
*
Address all correspondence to Katsushi Fujii at katsushi.fujii@riken.jp
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Abstract

The electrochemical catalytic effects of the NiO islands and layer on n-type GaN were investigated. The NiO islands covered some parts of the GaN surface and were seen to improve photoanodic current and prevent photoanodic corrosion. However, the NiO layer was found to worsen the photoanodic current. Hole transportation is thought to occur from the GaN valence band edge to the NiO valence band edge in their surface plane direction due to the band alignment. In addition, the electron capture for water oxidation is expected to be the valence band edge of the NiO instead of the intermediate state.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 2 , June 2018 , pp. 480 - 486
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Copyright
Copyright © Materials Research Society 2018 

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