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Solid-State X-Ray Imagers

Published online by Cambridge University Press:  31 January 2011

Yoshihiro Izumi  and
Yasukuni Yamane
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Abstract

New solid-state x-ray imagers known as digital flat-panel x-ray detectors are about to be launched in the field of medical diagnostics. The combination of active-matrix technologies developed for active-matrix liquid-crystal displays and x-ray detection materials constitutes the basis of the detectors. Recently, two kinds of direct-conversion detectors have been developed in order to improve their performance. One is a detector using a thick x-ray photoconductor (∼1 mm) made of amorphous selenium, and the other is a novel hybrid panel detector using an x-ray photoconductor made of polycrystalline Cd(Zn)Te. As a result, excellent resolution and good linear sensitivity have been achieved. These detectors have great promise as next-generation digital imaging systems for fluoroscopy and radiography.

Keywords

amorphous selenium (a-Se)cadmium telluride (CdTe)Cd(Zn)Teflat-panel detectorsflat-panel displaysmedical diagnosticsthin-film transistorsx-ray imaging.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 11: Advanced Flat-Panel Displays and Materials , November 2002 , pp. 889 - 893
Copyright
Copyright © Materials Research Society 2002

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References

1.Antonuk, L.E., Boudry, J., Yorkston, J., Morton, E.J., Huang, W., and Street, R.A., in Proc. SPIE, Vol. 1651 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1992) p. 94.Google Scholar
2.Moy, J.P., Thin Solid Films 337 (1999) p. 213.CrossRefGoogle Scholar
3.Antonuk, L.E., Mohri, Y.E., Hall, A., Jee, K.W., Maolinbay, M., Nassif, S.C., Rong, X., Siewerdsen, J.H., Zhao, Q., and Weisfield, R.L., in Proc. SPIE, Vol. 3336 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1998) p. 2.Google Scholar
4.Kameshima, T., Kaifu, N., Takami, E., Morishita, M., and Yamazaki, T., in Proc. SPIE, Vol. 3336 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1998) p. 453.Google Scholar
5.Granfors, P.R., in Proc. SPIE, Vol. 3659 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1999) p. 480.Google Scholar
6.Zhao, W. and Rowlands, J.A., Med. Phys. 22 (10) (1995) p. 1595.Google Scholar
7.Lee, D.L., Cheung, L.W., and Jeromin, L.S., in Proc. SPIE, Vol. 2432 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1995) p. 237.Google Scholar
8.Tsukamoto, A., Yamada, S., Tomisaki, T., Tanaka, M., Sakaguchi, T., Asahina, H., and Nishiki, M., in Proc. SPIE, Vol. 3336 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1998) p. 388.Google Scholar
9.Adachi, S., Hori, N., Sato, K., Tokuda, S., Sato, T., Uehara, K., Izumi, Y., Nagata, H., Yoshimura, Y., and Yamada, S., in Proc. SPIE, Vol. 3977 (SPIE— The International Society for Optical Engineering, Bellingham, WA, 2000) p. 38.Google Scholar
10.Squillante, M.R., Zhang, J., Zhou, C., Bennett, P., and Moy, L., in Semiconductors for Room-Temperature Radiation Detector Applications, edited by James, R.B., Schlesinger, T.E., Siffert, P., and Franks, L. (Mater. Res. Soc. Symp. Proc. 302, Pittsburgh, 1993) p. 319.Google Scholar
11.Street, R.A., Ready, S.E., Rahn, J.T., Mulato, M., Shah, K.S., Mei, P., Lu, J.P., Apte, R.B., Ho, J., van Schuylenbergh, K., Lemmi, F., Boyce, J.B., Schieber, M.M., and Hermon, H., in Proc. SPIE, Vol. 3977 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 2000) p. 418.Google Scholar
12.Spartiotis, K.E., Orava, R., Schulman, T., Pyyhtia, J., Sarakinos, M., Sanghera, B., Epenetos, A., Sunni, I., Salonen, J., Gronberg, L., Majander, P., Allison, D., and Myers, M., in Proc. SPIE, Vol. 3336 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1998) p. 529.Google Scholar
13.Zhao, W., Law, J., Waechter, D., Huang, Z., and Rowlands, J.A., Med. Phys. 25 (4) (1998) p. 539.CrossRefGoogle Scholar
14.Polischuk, B., Rougeot, H., Wong, K., Debrie, A., Poliquin, E., Hansroul, M., Martin, J.P., Truong, T.T., Choquette, M., Laperriere, L., and Shukri, Z., in Proc. SPIE, Vol. 3659 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1999) p. 417.Google Scholar
15.Izumi, Y., Teranuma, O., Yamane, Y., Funada, F., Tokuda, S., and Sato, T., in Digest of International Workshop on Active-Matrix Liquid-Crystal Displays, Tokyo 1999 (Japan Society of Applied Physics, Tokyo, 1999) p. 49.Google Scholar
16.Chu, T.L., Chu, S.S., Ferekides, C., Wu, C.Q., Britt, J., and Wang, C., J. Appl. Phys. 70 (12) (1991) p. 7608.Google Scholar
17.Hirasawa, S., Tanabe, K., Hori, N., Yoshimuta, T., Adachi, S., Uehara, K., Izumi, Y., Nagata, H., and Okada, H., Med. Imag. Tech. 18 (4) (2000) p. 625.Google Scholar
18.Eisen, Y. and Shor, A., J. Cryst. Growth 184/185 (1998) p. 1302.Google Scholar
19.Tokuda, S., Adachi, S., Sato, T., Yoshimuta, T., Nagata, H., Uehara, K., Izumi, Y., Teranuma, O., and Yamada, S., in Proc. SPIE, Vol. 4320 (SPIE— The International Society for Optical Engineering, Bellingham, WA, 2001) p. 140.Google Scholar