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A roadmap for future wide bandgap semiconductor power electronics

Published online by Cambridge University Press:  08 May 2015

Hajime Okumura
Hajime Okumura*
Affiliation:
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Japan; h-okumura@aist.go.jp
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Abstract

Energy savings and efficient usage of electric power are some of the most urgent issues for future sustainable development of human society. Power electronics is recognized as a key technology in this regard, and the innovation of power electronics is increasingly required. The important role of power electronics innovations in the future human society and a technology roadmap of power electronics utilizing wide bandgap semiconductors, which are typically represented by silicon carbide, are presented. This roadmap consists of several different domains in technology, from the materials side to the applications side. On this roadmap, three generations are defined as technological streams. Based on this roadmap, recent progress in silicon carbide power electronics is reviewed, and future prospects are discussed.

Keywords

Electronic materialsemiconductingdeviceselectrical properties
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 5: Power Electronics with Wide Bandgap Materials , May 2015 , pp. 439 - 444
Copyright
Copyright © Materials Research Society 2015 

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