Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T15:39:55.961Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanisms of Stress-Induced and Electromigration-Induced Damage in Passivated Narrow Metallizations on Rigid Substrates

Published online by Cambridge University Press:  29 November 2013

M.A. Korhonen ,
P. Børgesen  and
Che-Yu Li
Get access

Extract

Narrow, passivated metal lines are generally used as interconnects in VLSI microcircuits at the chip level. In most metals, high electric current densities lead to a mass flow of constituent atoms accompanying the current of electrons. Electromigration (EM) has long been considered an important reliability concern in the semiconductor industry because the current-induced atomic fluxes can give rise to void formation and open circuits, or hillock formation and short circuits between nearby interconnects. The problem is exacerbated because of the continued trend of increasing the density of the devices on the chip. This means that the line widths of the interconnects have been reduced and are now in the submicron range; correspondingly, the current densities have increased and may be as high as 106 A/cm2. Recently, thermal-stress-induced damage in metallizations has also been recognized as an important reliability concern, perhaps of the same gravity as EM. Thermal stresses in the metallizations are caused by the different thermal expansion coefficients of the metal and the substrate. Stress-induced void and hillock formation are the main causes of in terconnect failures before service. More recently, concern has been growing that thermal stresses or thermal-stress-induced voids may enhance the subsequent electromigration damage during the service life of the microchips.

For simplicity, this article addresses the case of pure aluminum metallizations on oxidized silicon substrates. However, much of what is said applies to other metal-rigid substrate systems as well, most notably to various aluminum and copper-based metallizations on ceramic substrates. The present treatment emphasizes void formation and growth in the metallizations during nd after cooldown from elevated temperatures, or those due to electromigration in service or testing conditions. Many of the mechanisms we explain are also applicable to hillock formation under compressive stresses, whether due to EM or thermal cycles during manufacturing.

Type
Mechanical Behavior of Thin Films
Information
MRS Bulletin , Volume 17 , Issue 7 , July 1992 , pp. 61 - 69
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Sze, S.M., VLSI Technology (McGraw-Hill, New York, 1983).Google Scholar
2.D'Heurle, F.M. and Rosenberg, R., Physics of Thin Films 7 (1973) p. 257.CrossRefGoogle Scholar
3.Kwok, T. and Ho, P.S., in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by Gupta, D. and Ho, P.S. (Noyes Publications, Park Ridge, New Jersey, 1988) p. 369.Google Scholar
4.Turner, T. and Wendel, K., Proc. 23rd Int. Reliability Physics Symp. (IEEE, New York, 1985) p. 142.Google Scholar
5.Yue, J.T., Funsten, W.P., and Taylor, R.V., Proc. 23rd Int. Reliability Physics Symp. (IEEE, New York, 1985) p. 126.Google Scholar
6.Hinode, K., Owada, N., Nishida, T., and Mukai, K., J. Vac. Sci. Technol. B 5 (1987) p. 518.CrossRefGoogle Scholar
7.Li, C-Y., Black, R.D., and LaFontaine, W.R., Appl. Phys. Lett. 53 (1988) p. 31.CrossRefGoogle Scholar
8.Li, C-Y., Bergesen, P., and Sullivan, T., Appl. Phys. Lett. 59 (1991) p. 1464.CrossRefGoogle Scholar
9.Børgesen, P., Korhonen, M.A., Brown, D.D., and Li, C-Y., Proc. Int. Workshop on Stress-Induced Phenomena in Metallizations (Ithaca, New York, 1991).Google Scholar
10.Nix, W.D. and Sauter, A.I., Proc. Int. Workshop on Stress-Induced Phenomena in Metallizations (Ithaca, New York, 1991).Google Scholar
11.Moske, M.A., Ho, P.S., Hu, C.K., and Small, S.M., Proc. Int. Workshop on Stress-Induced Phenomena in Metallizations (Ithaca, New York, 1991).Google Scholar
12.Korhonen, M.A., Børgesen, P., and Li, C-Y., in Thin Films: Stresses and Mechanical Properties III, edited by Nix, W.D., Bravman, J.C., Arzt, E., and Freund, L.B. (Mater. Res. Soc. Symp. Proc. 239, Pittsburgh, PA, 1992).Google Scholar
13.Børgesen, P., Korhonen, M.A., Sullivan, T.D., Brown, D.D., and Li, C-Y., in Thin Films: Stresses and Mechanical Properties III, edited by Nix, W.D., Bravman, J.C., Arzt, E., and Freund, L.B. (Mater. Res. Soc. Symp. Proc. 239, Pittsburgh, PA, 1992).Google Scholar
14.Jones, R.E., Proc. 25th Int. Reliability Physics Symp. (IEEE, New York, 1987) p. 1.Google Scholar
15.Sauter, A.I. and Nix, W.D., in Thin Films: Stresses and Mechanical Properties II, edited by Doerner, M., Oliver, W.C., Pharr, G.M., and Brotzen, F.R. (Mater. Res. Soc. Symp. Proc. 188, Pittsburgh, PA, 1990) P. 15.Google Scholar
16.Niwa, H., Yagi, H., Tsuchikawa, H., and Kato, M., J. Appl. Phys. 68 (1990) p. 328.CrossRefGoogle Scholar
17.Korhonen, M.A., Black, R.D., and Li, C-Y., J. Appl. Phys. 69 (1991) p. 1748.CrossRefGoogle Scholar
18.Korhonen, M.A, Børgesen, P., and Li, C-Y., in Thermal Stress and Strain in Microelectronics Packaging, edited by Lau, J.H. (Van Nostrand Reinhold, New York, 1992).Google Scholar
19.Hu, S.M., Appl. Phys. Lett. 59 (1991) p. 2685.CrossRefGoogle Scholar
20.Timoshenko, S., Strength of Materials (Van Nostrand, New York, 1958) p. 228.Google Scholar
21.Korhonen, M.A., Børgesen, P., and Li, C-Y., in Materials Reliability Issues in Microelectronics, edited by Lloyd, J.R., Ho, P.S., Sah, C.T., and Yost, F. (Mater. Res. Soc. Symp. Proc. 225, Pittsburgh, PA, 1991) p. 133.Google Scholar
22.Korhonen, M.A., Paszkiet, C. A., Black, R.D., and Li, C-Y., Scripta Metall. 24 (1990) p. 2297.CrossRefGoogle Scholar
23.Korhonen, M.A., Suominen, L.S., and Li, C-Y., in Nondestructive Characterization of Materials IV, edited by Ruud, C.O., Bussiere, J. F., and Green, R. E. (Plenum, New York, 1992), p. 15.Google Scholar
24.Steinwall, J.E. and Johnson, H.H., Thin Films: Stresses and Mechanical Properties II, edited by Doerner, M., Oliver, W.C., Pharr, G.M., and Brotzen, F.R. (Mater. Res. Soc. Symp. Proc. 188, Pittsburgh, PA, 1990) p. 177.Google Scholar
25.Paszkiet, C.A., Korhonen, M.A., and Li, C-Y., in Materials Reliability Issues in Microelectronics, edited by Lloyd, J.R., Ho, P.S., Sah, C.T., and Yost, F. (Mater. Res. Soc. Symp. Proc. 225, Pittsburgh, PA, 1991) p. 161.Google Scholar
26.Korhonen, M.A., Børgesen, P., and Li, C-Y., in Materials Reliability Issues in Microelectronics, edited by Lloyd, J.R., Ho, P.S., Sah, C.T., and Yost, F. (Mater. Res. Soc. Symp. Proc. 225, Pittsburgh, PA, 1991) p. 155.Google Scholar
27.Paszkiet, C.A., Korhonen, M.A., and Li, C-Y., in Thin Films: Stresses and Mechanical Properties II, edited by Doerner, M., Oliver, W.C., Pharr, G.M., and Brotzen, F.R. (Mater. Res. Soc. Symp. Proc. 188, Pittsburgh, PA, 1990) p. 153.Google Scholar
28.Korhonen, M.A., LaFontaine, W.R., Børgesen, P., and Li, C-Y., J. Appl. Phys. 70 (1991) p. 6774.CrossRefGoogle Scholar
29.Tvergaard, V., Acta Metall. 39 (1991) p. 419.CrossRefGoogle Scholar
30.Hosoda, T., Niwa, H., Yagi, H., and Tsuchikawa, H., Proc. 29 Int. Reliability Physics Symp. (IEEE, New York, 1991) p. 77.Google Scholar
31.Yagi, H., Niwa, H., Hosoda, T., Inoue, M., and Tsuchikawa, T., Proc. Int. Workshop on Stress-Induced Phenomena in Metallizations (Ithaca, New York, 1991).Google Scholar
32.Greenbaum, B., Sauter, A., Flinn, P.A., and Nix, W.D., Appl. Phys. Lett. 58 (1991) p. 1845.CrossRefGoogle Scholar
33.Flinn, P.A., Proc. Int. Workshop on Stress-Induced Phenomena in Metallizations (Ithaca, New York, 1991).Google Scholar
34.Flinn, P.A. and Chiang, C., J. Appl. Phys. 67 (1990) p. 2927.CrossRefGoogle Scholar
35.Tezaki, A., Mineta, T., Egawa, H., and Noguchi, T., Proc. 28th Int. Reliability Physics Symp. (IEEE, New York, 1990) p. 221.Google Scholar
36.Korhonen, M.A., Paszkiet, C.A., and Li, C-Y., J. Appl. Phys. 69 (1991) p. 8083.CrossRefGoogle Scholar
37.Dyson, B.F., Can. Met. Quart. 18 (1979) p. 31.CrossRefGoogle Scholar
38.Jackson, M.S. and Li, C-Y., Acta Metall. 30 (1982) p. 1993.CrossRefGoogle Scholar
39.Yost, F., Scripta Metall. 23 (1989) p. 1323.CrossRefGoogle Scholar
40.Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. ED-34 (1987) p. 689.CrossRefGoogle Scholar
41.Blech, I.A. and Herring, C., Appl. Phys. Lett. 29 (1976) p. 131.CrossRefGoogle Scholar
42.Tu, K.N., Phys. Rev. B 45 (1992) p. 1409.CrossRefGoogle Scholar
43.Walton, D.T., Frost, H.J., and Thomson, C.V., in Materials Reliability Issues in Microelectronics, edited by Lloyd, J.R., Ho, P.S., Sah, C.T., and Yost, F. (Mater. Res. Soc. Symp. Proc. 225, Pittsburgh, PA, 1991) p. 219.Google Scholar
44.Ross, C.A., in Materials Reliability Issues in Microelectronics, edited by Lloyd, J.R., Ho, P.S., Sah, C.T., and Yost, F. (Mater. Res. Soc. Symp. Proc. 225, Pittsburgh, PA, 1991) p. 35.Google Scholar
45.Kircheim, R., Acta Metall Mater. 40 (1992) p. 309.CrossRefGoogle Scholar
46.Korhonen, M.A., Børgesen, P., Tu, K.N., and Li, C-Y. (to be published).Google Scholar
47.Hemmert, R.S. and Costa, M., Proc. 29th Int. Reliability Physics Symp. (IEEE, New York, 1991) p. 64.Google Scholar
48.Cho, J. and Thomson, C.V, Appl. Phys. Lett. 54 (1989) p. 2577.CrossRefGoogle Scholar
49.Arzt, E. and Nix, W.D., J. Mater. Res. 6 (1991) p. 731.CrossRefGoogle Scholar
50.Levine, E. and Kitchner, J., Proc. 22nd Int. Reliability Physics Symp. (IEEE, New York, 1984) p. 242.Google Scholar
51.Ho, P.S., J. Appl. Phys. 41 (1970) p. 64.CrossRefGoogle Scholar
52.Nichols, F.A., J. Nucl. Mater. 84 (1979) p. 1.CrossRefGoogle Scholar