The beginning of June saw the cities of Tokyo, Kyoto, and Shanghai host to several weeks of interdisciplinary exchanges on a broad spectrum of materials topics. The meetings began with the MRS International Meeting on Advanced Materials (May 30 - June 3) and continued with the Shanghai Workshop on Characterization of Ion Implantation in Silicon (June 2-3) held as part of the 7th International Conference on Ion Implantation Technology in Kyoto (June 7-10), the 6th International Conference on Ion Beam Modification of Materials (June 12-17), and the JSAP-MRS International Conference on Electronic Materials (June 13-15).

During the week preceding the meetings, the International Trade Center grounds at Harumi were the site of an Advanced Materials and Engineering Exhibition. Machine tools, CAD/CAM, and advanced materials exhibits filled three pavilions. The Materials Research Society was represented in the advanced materials area where, through a brochure translated into Japanese, the Society and its programs were introduced to the exhibit's visitors.

The concept for the MRS International Meeting on Advanced Materials held May 30 to June 3 took root several years ago and represents the first “MRS-style” event to be organized in Japan. Based on the enthusiastic participation by Japanese scientists and by a healthy complement of foreign scientists, it should repeat. MRS First Vice President R.P.H. Chang has been responsible for the interaction between the Materials Research Society and the meeting Organizers.

General chairmen for the event were S. Somiya of the Nishi Tokyo University (currently a Principal Editor for Journal of Materials Research) and M. Doyama of Nagoya University. They assembled some 20 topical symposia which were held in two buildings of the Sunshine City complex in the Ikebukuro district of Tokyo. All the sessions were very well attended, with total meeting registrant numbers reaching over 1,500.