Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-30T01:14:59.044Z Has data issue: false hasContentIssue false

Chemical and Thin-Film Strategies for New Transparent Conducting Oxides

Published online by Cambridge University Press:  31 January 2011

Get access

Extract

Transparent conducting oxides (TCOs) have been known and employed technologically for more than 50 years, primarily in the form of doped single-cation oxides such as In2O3 and SnO2. Beginning in the 1990s, however, multi-cation oxide TCOs began to be developed in Japan (see the article by Minami in this issue and the references therein) and at the former Bell Laboratories. Since then, new TCO phases are being reported with increasing frequency as technological interest in this area heightens. At the same time, our fundamental understanding of the chemical and structural origins of transparent conductivity continues to expand and promises a pathway to dramatically improved materials for a host of applications. This article describes a collaborative, multi-investigator bulk an d thin-film research effort at Northwestern University aimed at the synthesis, characterization, and enhanced understanding of multi-cation (compound and solidsolution) TCOs, and provides a brief account of what we are discovering about this important class of materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Cava, R.J., Phillips, J.M., Kwo, J., Thomas, G.A., van Dover, R.B., Carter, S.A., Krajewski, J.J., Peck, W.F., Jr., Marshall, J.H., and Rapkine, D.H., Appl. Phys. Lett. 64 (1994) p. 2071.CrossRefGoogle Scholar
2.Phillips, J.M., Cava, R.J., Thomas, G.A., Carter, S.A., Kwo, J., Siegrist, T., Krajewski, J.J., Marshall, J.H., Peck, W.F. Jr., and Rapkine, D.H., Appl. Phys. Lett. 67 (1995) p. 2246.CrossRefGoogle Scholar
3.Edwards, D.D., “Phase Relations, Crystal Structures, and Electrical Properties of Select Oxides in the Gallium-Indium-Tin-Oxide System,” PhD thesis, Northwestern University, 1997.Google Scholar
4.Palmer, G.B., “Phase Relations and Physical Properties of New Transparent Conductors in the (Indium, Gallium)-Tin-Zinc Oxide Systems,” PhD thesis, Northwestern University, 1999.CrossRefGoogle Scholar
5.Moriga, T., Kammler, D.R., Mason, T.O., Palmer, G.B., and Poeppelmeier, K.R., J. Am. Ceram. Soc. 82 (1999) p. 2705.CrossRefGoogle Scholar
6.Kammler, D.R. (unpublished manuscript).Google Scholar
7.Edwards, D.D., Mason, T.O., Goutenoire, F., and Poeppelmeier, K.R., Appl. Phys. Lett. 70 (1997) p. 1706.CrossRefGoogle Scholar
8.Edwards, D.D., Mason, T.O., Sinkler, W., Marks, L.D., Goutenoire, F., and Poeppelmeier, K.R., J. Solid State Chem. 140 (1998) p. 242.CrossRefGoogle Scholar
9.Nakamura, M., Kimizuka, N., and Mohri, T., J. Solid State Chem. 93 (1991) p. 298.CrossRefGoogle Scholar
10.Moriga, T., Edwards, D.D., Mason, T.O., Palmer, G.B., Poeppelmeier, K.R., Schindler, J.L., Kannewurf, C.R., and Nakabayashi, I., J. Am. Ceram. Soc. 81 (1998) p. 1310.CrossRefGoogle Scholar
11.Li, C., Bando, Y., Nakamura, M., and Kimizuka, N., Jpn. Soc. Electron Microsc. 46 (1997) p. 119.CrossRefGoogle Scholar
12.Palmer, G.B., Poeppelmeier, K.R., and Mason, T.O., Chem. Mater. 9 (1997) p. 3121.CrossRefGoogle Scholar
13.Kammler, D.R., Mason, T.O., and Poeppelmeier, K.R., Chem. Mater. (2000) in press.Google Scholar
14.Shannon, R.D., Gillson, J.L., and Bouchard, R.J., J. Phys. Chem. Solids 38 (1977) p. 877.CrossRefGoogle Scholar
15.Palmer, G.B., Poeppelmeier, K.R., and Mason, T.O., J. Solid State Chem. 134 (1997) p. 192.CrossRefGoogle Scholar
16.Wu, X., Coutts, T.J., and Mulligan, W.P., J. Vac. Sci. Technol., A 15 (1997) p. 1057.CrossRefGoogle Scholar
17.Cardile, C.M., Koplick, A.J., McPherson, R., and West, B.O., J. Mater. Sci. Lett. 8 (1989) p. 370.CrossRefGoogle Scholar
18.Stapinski, T., Japa, E., and Zukrowski, J., Phys. Status Solidi A 103 (1987) p. K93.CrossRefGoogle Scholar
19.Frank, G. and Kostlin, H., Appl. Phys. A 27 (1982) p. 197.CrossRefGoogle Scholar
20.Hwang, J.-H., Edwards, D.D., Kammler, D.R., and Mason, T.O., Solid State Ionics 129 (2000) p. 135.CrossRefGoogle Scholar
21.Gonzalez, G., Cohen, J., Hwang, J.-H., Mason, T., Hodges, J., and Jorgensen, J., “Defect Structures of Indium Tin Oxide and Its Relationship to Conductivity,” in Proc. Int. Conf. Mass and Charge Transport in Inorganic Materials, edited by P., Vincenzini (Techna Publishers, Faenza, Italy, 2000) in press.Google Scholar
22.Dieckmann, R. and Schmalzried, H., Phys. Chem. 81 (1977) p. 414.Google Scholar
23.Haacke, G., Mealmaker, W.E., and Siegel, L.A., Thin Solid Films 55 (1978) p. 67.CrossRefGoogle Scholar
24.Mryasov, O.N. and Freeman, A.J., Phys. Rev. B (submitted for publication).Google Scholar
25.Huang, X.Y., Asahi, R., Park, K.-T., and Freeman, A.J. (unpublished manuscript).Google Scholar
26.Belot, J.A., McNeely, R.J., Wang, A., Reedy, C.J., Marks, T.J., Yap, G.P.A., and Rheingold, A.L., J. Mater. Res. 14 (1999) p. 15.CrossRefGoogle Scholar
27.Belot, J.A., Wang, A., McNeely, R.J., Liable-Sands, L., Rheingold, A.L., and Marks, T.J., Chem. Vap. Depos. 5 (1999) p. 65.3.0.CO;2-B>CrossRefGoogle Scholar
28.Neumayer, D.A., Belot, J.A., Feezel, R.L., Reedy, C.J., Stern, C.L., Marks, T.J., Liable-Sands, L.M., and Rheingold, A.L., Inorg. Chem. 37 (1998) p. 5625.CrossRefGoogle Scholar
29.Belot, J.A., Neumayer, D.A., Reedy, C.J., Studebaker, D.B., Hinds, B.J., Stern, C.L., and Marks, T.J., Chem. Mater. 9 (1997) p. 1638.CrossRefGoogle Scholar
30.Wang, A., Cheng, S.C., Chudzik, M.P., Marks, T.J., Chang, R.P.H., and Kannewurf, C.R., Appl. Phys. Lett. 73 (1998) p. 327.CrossRefGoogle Scholar
31.Wang, A., Cheng, S.C., Belot, J.A., McNeely, R.J., Cheng, J., Marcordes, B., Marks, T.J., Dai, J.Y., Chang, R.P.H., Schindler, J.L., Chudzik, M.P., and Kannewurf, C.R., in Chemical Aspects of Electronic Ceramics Processing, edited by P.N., Kumta, A.F., Hepp, D.B., Beach, B., Arkles, and J.J., Sullivan (Mater. Res. Soc. Symp. Proc. 495, Warrendale, PA, 1998) p. 3.Google Scholar
32.Wang, A., Edleman, N.L., Babcock, J.R., Marks, T.J., Lane, M.A., Brazis, P.W., and Kannewurf, C.R., Mater. Res. Soc. Symp. Series in press.Google Scholar
33.Babcock, J.R., Edleman, N.L., Wang, A., Stern, C.L., and Marks, T.J., Adv. Mater. CVD (2000) in press.Google Scholar
34.Yan, Y., Pennycook, S.J., Dai, J., Chang, R.P.H., Wang, A., and Marks, T.J., Appl. Phys. Lett. 73 (1998) p. 2585.CrossRefGoogle Scholar
35.Wang, A., Edleman, N.L., Marks, T.J., Lane, M.A., Brazis, P.W., and Kannewurf, C.R., submitted for publication.Google Scholar
36.Minami, T., Kakumu, T., Shimokawa, K., and Takata, S., Thin Solid Films 317 (1–2) (1998) p. 318.CrossRefGoogle Scholar
37.Sernelius, B.E., Berggren, K.-F., Jin, Z.-C., Hamberg, I., and Granqvist, C.G., Phys. Rev. B 37 (1988) p. 244.Google Scholar
38.Burstein, E., Phys. Rev. 93 (1954) p. 632.CrossRefGoogle Scholar
39.Minami, T., Kakumu, T., and Takata, S., J. Vac. Sci. Technol., A 14 (1996) p. 1704.CrossRefGoogle Scholar
40.Minami, T., Takeda, Y., Kakumu, T., Takata, S., and Fukuda, I., J. Vac. Sci. Technol., A 15 (1997) p. 958.CrossRefGoogle Scholar
41.Babcock, J.R., Wang, A., Edleman, N.L., Benson, D.D., Metz, A.W., Metz, M.V., and Marks, T.J., “Development and Implementation of New Volatile Cd and Zn Precursors for the Growth of Transparent Conducting Oxide Thin Films via MOCVD,” presented at the Spring 2000 Materials Research Society Meeting, San Francisco, CA, April 27, 2000.CrossRefGoogle Scholar
42.Wang, A., Babcock, J.R., Edleman, N.L., Lane, M.A., Yang, S., Kannewurf, C.R., Freeman, A.J., and Marks, T.J. (manuscript in preparation).Google Scholar