Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-04-30T12:19:52.544Z Has data issue: false hasContentIssue false
  • English
  • Français

Aluminum Reflow Sputtering

Published online by Cambridge University Press:  29 November 2013

Kuniko Kikuta
Get access

Extract

The scaling of integrated-circuit device dimensions in the horizontal direction has caused an increase in aspect ratios of contact holes and vias without a corresponding scaledown in vertical dimensions. Conventional sputtering has become unreliable for handling higher aspect-ratio via/contact holes because of its poor step coverage. Several studies have attempted to overcome this problem by using W-CVD and reflow technology. The W-CVD is used for practical device fabrications. However, this technique has several problems such as poor adhesion to SiO2, poor W surface morphology, greater resistivity than Al, and the need of an etch-back process.

Al reflow technology using a conventional DC magnetron sputtering system can simplify device-fabrication processes and achieve high reliability without Al/W interfaces. In particular, the Al reflow technology is profitable for multi-level interconnections in combination with a damascene process by using Al chemical mechanical polishing (CMP). These interconnections are necessary for miniaturized and high-speed devices because they provide lower resistivity than W and simplify fabrication processes, resulting in lower cost.

This article describes recent Al reflow sputtering technologies as well as application of via and interconnect metallization.

Type
Metallization for Integrated Circuit Manufacturing
Information
MRS Bulletin , Volume 20 , Issue 11 , November 1995 , pp. 53 - 56
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Wilson, S.R., Freeman, J.L., and Tracy, C.J., Proc. VLSI Multilevel Interconnection Conf. (IEEE, New York, 1990) p. 42.CrossRefGoogle Scholar
2.Liu, R., Cheung, K.P., and Lai, W.Y.C., Proc. VLSI Multilevel Interconnection Conf. (IEEE, New York, 1989) p. 329.CrossRefGoogle Scholar
3.Baseman, R.J., J. Vac. Sci. Technol. B8 (1989) p. 84.Google Scholar
4.Hoffman, V., Griswold, J., Mints, D., and Harra, D., Thin Solid Films 153 (1987) p. 369.CrossRefGoogle Scholar
5.Inoue, M., Hashizume, K., and Tsuchikawa, H., J. Vac. Sci. Technol. A6 (1988) p. 1636.CrossRefGoogle Scholar
6.Georgiou, G.E., Cheung, K.P., and Liu, R., Proc. VLSI Multilevel Interconnection Conf. (IEEE, New York, 1989) p. 315.CrossRefGoogle Scholar
7.Ono, H., Ushiku, Y. and Yoda, T., Proc. VLSI Multilevel Interconnection Conf. (IEEE, New York, 1990) p. 76.CrossRefGoogle Scholar
8.Nishimura, H., Yamada, T., and Oagawa, S., Proc. VLSI Multilevel Interconnection Conf. (IEEE, New York, 1991) p. 170.Google Scholar
9.Taguchi, M., Koyama, K., and Sugano, Y., Proc. VLSI Multilevel Interconnection Conf. (IEEE, New York, 1992) p. 219.Google Scholar
10.Kikuta, K., Nakajima, T., Ueno, K., and Kikkawa, T., Technical Digest of International Electron Devices Meeting (IEEE, 1993) p. 285.CrossRefGoogle Scholar
11.Kikuta, K., Nakajima, T., Hayashi, Y., Harashima, K., and Kikkawa, T., Technical Digest of International Electron Devices Meeting (IEEE, 1994) p. 101.Google Scholar
12.Licata, T., Okazalci, M., Ronay, M., Landers, W., Ohiwa, T., Poetzlberger, H., Aoci, H., Dobuzinsky, D., Filippi, R., Restaino, D., Knorr, D., and Ryan, J., Proc. VLSI Multilevel Interconnection Conf. (1995) p. 596.Google Scholar
13.Parker, Y.H., Zold, F.T., and Smith, J.F., Thin Solid Films 129 (1985) p. 309.CrossRefGoogle Scholar
14.Skelly, D.W. and Grunke, L.A., J. Vac. Sci. Technol. A 4 (1986) p. 457.CrossRefGoogle Scholar
15.Mukai, R., Iizuka, M., Kudo, H., and Nakano, M., Proc. VLSI Multilevel Interconnection Conf. (1991) p. 192.Google Scholar
16.Morimoto, M., Takehiro, S., Matsi, Y., Utsunomiya, l., Shindo, H., Shingubara, S., and Horiike, Y., Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials 96 (1991).Google Scholar
17.Kikuta, K., Kikkawa, T., and Aoki, H., Symp. on VLSI Technology Digest 37 (1991).Google Scholar
18.Kikuta, K., Kikkawa, T., and Aoki, H., Proc. VLSI Multilevel Interconnection Conf. (IEEE, New York, 1991) p. 163.Google Scholar
19.Ito, N., Yamada, Y., Murao, Y., and Huo, D.T.C., Proc. of VLSI Multilevel Interconnection Conf. 336 (1994).Google Scholar
20.Park, L.S., Park, C.S., Choi, G.H., Wee, Y.J., Kim, I.C., Koh, K.M., Lee, H.D., Chung, U.I., Lee, S.I., and Lee, M.Y., Proc. VLSI Multilevel Interconnection Conf. 45 (1995).Google Scholar
21.Xu, Z., Kieu, H., Yao, T., and Raaijmakers, I.J., Proc. of VLSI Multilevel Interconnection Conf. 158 (1994).Google Scholar
22.Chiang, E.J.H., Wang, K.C., Lee, D., Carmody, J., Hofman, V., and Helms, H. Jr., Proc. of VLSI Multilevel Interconnection Conf. 201 (1994).Google Scholar
23.Zhao, B., Ta, O., and Ting, C.H., Conf. Proc. ULSI-X of Advanced Metallization for ULSI Applications in 1994 (1995) p. 511.Google Scholar
24.Ting, C.H., Zhao, B., and Ta, L., Conf. Proc. ULSI-X of Advanced Metallization for ULSI Applications in 1994 (1995) p. 517.Google Scholar
25.Joshi, R. V., Dalal, H., and Filippi, R., IEEE Electron Device Letters 16 (1995) p. 233.CrossRefGoogle Scholar
26.Dixit, G.A., Chisholm, M.F., Jain, M.K., Weaver, T., Ting, L.M., Poarch, S., Mizobuchi, K., Havemann, R.H., Dobson, C.D., Jeffryes, A.I., Holverson, P.J., Rich, P., Butler, D.C., and Hems, J., IEEE IEDM Tech. Dig. (1994) p. 105.Google Scholar
27.Holverson, P.J., Dobson, C.D., Rich, P., Butler, D.C., Green, G.R., Hams, M.G. M., McGeown, A., Dixit, G.A., Poarh, S., Hamamoto, K., Bohannon, B., Hsu, W.Y., and Havemann, R.H., Proc. VLSI Multilevel Interconnection Conf. (1995) p. 537.Google Scholar
28.Shterenfeld-Lavie, Z., Rabinovich, I., Levy, J., Haim, A., Dobson, C., Buchanan, K., Rich, P., and Thomas, D.J., Proc. VLSI Multilevel Interconnection Conf. 31 (1995).Google Scholar
29.Barth, H.J., Frank, M., Rohl, S., Schneegans, M., Wendt, H., Dobson, C.D., Rich, P., Buchanan, K.E., and Harris, M.G.M., Proc. VLSI Multilevel Interconnection Conf. 52 (1995).Google Scholar
30.Black, J.R., IEEE Transactions on Electron Devices, ED-16 (1969) p. 338.Google Scholar
31.Kikuta, K. and Kikkawa, T., Extended Abstract of the 53rd Autumn Meeting, vol. 2 (The Japan Society of Applied Physics, 1992) p. 586.Google Scholar
32.Hosaka, M., Hosoda, T., and Okamura, S., Extended Abstract of the 40th Spring Meeting, vol. 2 (The Japan Society of Applied Physics and Related Societies, 1993) p. 720.Google Scholar
33.Ohba, T., Proc. Advanced Metallization for ULSI Applications (Mater. Res. Soc., Pittsburgh, 1991) p. 25.Google Scholar
34.Etabil, J.J., Rathore, H.S., and Lavine, E.N., Proc. VLSI Multilevel Interconnection Conf. (IEEE, New York, 1991) p. 242.Google Scholar