Adding HCl during Chemical Vapor Deposition Produces Controlled Growth of 6H-SiC on On-Axis 6H-SiC(0001) Substrates

June Lau

doi:10.1557/mrs2000.141

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Adding HCl during Chemical Vapor Deposition Produces Controlled Growth of 6H-SiC on On-Axis 6H-SiC(0001) Substrates

Published online by Cambridge University Press: 31 January 2011

June Lau

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Type: Research/Researchers
Information: MRS Bulletin , Volume 25 , Issue 8: Transparent Conducting Oxides , August 2000 , pp. 7

DOI: https://doi.org/10.1557/mrs2000.141 [Opens in a new window]
Copyright: Copyright © Materials Research Society 2000

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Adding HCl during Chemical Vapor Deposition Produces Controlled Growth of 6H-SiC on On-Axis 6H-SiC(0001) Substrates

Volume 25, Issue 8
June Lau
DOI: https://doi.org/10.1557/mrs2000.141

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Adding HCl during Chemical Vapor Deposition Produces Controlled Growth of 6H-SiC on On-Axis 6H-SiC(0001) Substrates

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