Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-22T14:14:54.328Z Has data issue: false hasContentIssue false
  • English
  • Français

The 9th International Conference on Nitride Semiconductors to be held in July 2011

Published online by Cambridge University Press:  27 April 2011

Abstract

An abstract is not available for this content. As you have access to this content, full HTML content is provided on this page. A PDF of this content is also available in through the ‘Save PDF’ action button.
Type
News
Information
MRS Bulletin , Volume 36 , Issue 4: Addressing broader impacts through K–12 outreach in materials education , April 2011 , pp. 304
Copyright
Copyright © Materials Research Society 2011

The 9th International Conference on Nitride Semiconductors (ICNS-9) will be held in Glasgow, Scotland on July 10–15, 2011, and continues the series of conferences providing an international forum for reporting advances in group-III nitride semiconductors such as gallium nitride and indium nitride.

Both fundamental research and applications will be covered, with oral and poster sessions focusing on topics such as epitaxial growth; bulk crystal growth; theory and simulation; optical and electronic devices (e.g., light-emitting diodes, lasers, and transistors); material characterization and development; and nanostructures involving nitride semiconductors. Confirmed keynote speakers include Umesh Mishra (University of California, Santa Barbara) and Hiroshi Amano (Meijo University).

For more details, visit www.icns9.org or contact , 44-141-331-0123, or fax 44-141-331-0234.