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Study on the Temperature Dependency Effect of Thermal Coefficient of Resistance in Amorphous Silicon for Uncooled Microbolometer Application

Published online by Cambridge University Press:  02 January 2019

Junkyo Jeong ,
Byeongjun Jeong ,
Jaeseop Oh  and
Gawon Lee
Junkyo Jeong
Affiliation:
Chungnam National University, Deajoen, Republic of Korea
Byeongjun Jeong
Affiliation:
Chungnam National University, Deajoen, Republic of Korea
Jaeseop Oh
Affiliation:
National NanoFab Center, Deajoen, Republic of Korea
Gawon Lee*
Affiliation:
Chungnam National University, Deajoen, Republic of Korea
*
*(Email: gawon@cnu.ac.kr)
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Abstract

In this paper, we studied the temperature dependency effect of thermal coefficient of resistance (TCR) in amorphous silicon (a-Si) on the properties of uncooled microbolometer with a-Si as a resistance layer by simulation. The temperature of the microbolometer rises during the operation mainly due to the heat generated by Joule heating as well as IR radiation. Generally, the TCR of a-Si is treated as a constant for the simplicity but the absolute value of TCR has been reported to decrease as the temperature increases. Therefore, to improve the device characteristics, the effect of temperature dependency of TCR in a-Si should be considered carefully in the range of the operating temperature. The responsivities of microbolometer are simulated according to the width of the resistance layer (W) with TCR as a function of temperature, which shows that the optimal W condition is affected by the TCR value changed by the temperature.

Keywords

sensormicroelectromechanical systems (MEMS)
Type
Articles
Information
MRS Advances , Volume 4 , Issue 8: Thermal Properties and Thermoelectric Materials , 2019 , pp. 447 - 455
Copyright
Copyright © Materials Research Society 2018 

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