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Quantum wires by direct laser fabrication

Published online by Cambridge University Press:  23 May 2016

Anahita Haghizadeh  and
Haeyeon Yang
Anahita Haghizadeh
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
Haeyeon Yang*
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A. Center for Security Printing and Anti-Counterfeiting Technology, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
*
*(Email: haeyeon.yang@sdsmt.edu)
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Abstract

For optoelectronic device applications, quantum wires can be used as active media due to their unique physical properties. However, conventional approaches such as the self-assembly via the Stranski-Krastanov (S-K) growth technique have a limited success in their applications toward optoelectronic devices including photovoltaics and solar cells. A novel fabrication mechanism for quality quantum wires has been discovered. The laser fabricated nanowires semiconductor surfaces can have width and height as small as 30 and 5 nm, respectively while the density is one per 200 nm.

Keywords

nanostructurescanning probe microscopy (SPM)self-assembly
Type
Articles
Information
MRS Advances , Volume 1 , Issue 28: Nanotechnology , 2016 , pp. 2065 - 2069
Copyright
Copyright © Materials Research Society 2016 

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References

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