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Material Removal Simulation in Sawing Processes of Photovoltaic Silicon

Published online by Cambridge University Press:  04 February 2019

F. Wallburg*
Affiliation:
Leipzig University of Applied Sciences, Faculty of Mechanical and Energy Engineering, Leipzig, Germany Fraunhofer Center for Silicon Photovoltaics CSP, 06120Halle (Saale), Germany TU Bergakademie Freiberg, Institute of Mechanics and Fluid Dynamics, 09599Freiberg, Germany
M. Kuna
Affiliation:
TU Bergakademie Freiberg, Institute of Mechanics and Fluid Dynamics, 09599Freiberg, Germany
S. Schoenfelder
Affiliation:
Leipzig University of Applied Sciences, Faculty of Mechanical and Energy Engineering, Leipzig, Germany Fraunhofer Center for Silicon Photovoltaics CSP, 06120Halle (Saale), Germany
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Abstract

The wafering of thin silicon substrates is done by wire sawing technology. In this work a numerical model for the investigation of microstructural mechanisms like cracking and damage evolution during the sawing process is presented. A three-dimensional finite element model representing the phase transformation properties of silicon is validated by loading curves from nano-indentation experiments. By using cohesive zone finite elements, the crack lengths as well as crack initiation depths can be quantified and compared with the experimental results in terms of the maximum depth of subsurface damage.

Type
Articles
Copyright
Copyright © Materials Research Society 2019 

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