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Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

Published online by Cambridge University Press:  24 April 2017

Neelu Shrestha ,
Martyn H. Kibel ,
Patrick W Leech ,
Anthony S Holland ,
Geoffrey K Reeves ,
Mark C Ridgway  and
Phillip Tanner
Neelu Shrestha
Affiliation:
School of Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Martyn H. Kibel
Affiliation:
Centre for Materials and Surface Science, Department of Chemistry and Physics, La Trobe University, Melbourne, Victoria, Australia.
Patrick W Leech*
Affiliation:
School of Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Anthony S Holland
Affiliation:
School of Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Geoffrey K Reeves
Affiliation:
School of Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Mark C Ridgway
Affiliation:
Electronic Materials Engineering, Australian National University, Canberra, ACT, Australia.
Phillip Tanner
Affiliation:
Griffith University, Queensland Microtechnology Facility, Brisbane, Australia.
*
*(Email: Patrick.Leech@rmit.edu.au)
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Abstract

The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.

Keywords

electrical propertiesion-implantationannealing
Type
Articles
Information
MRS Advances , Volume 2 , Issue 51: Electronic Devices and Materials , 2017 , pp. 2903 - 2908
Copyright
Copyright © Materials Research Society 2017 

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References

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