Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-07-05T00:23:41.081Z Has data issue: false hasContentIssue false
  • English
  • Français

High density quantum dots by direct laser fabrication

Published online by Cambridge University Press:  19 April 2016

Anahita Haghizadeh  and
Haeyeon Yang
Anahita Haghizadeh
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
Haeyeon Yang*
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A. Center for Security Printing and Anti-Counterfeiting Technology, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
*
*Corresponding author; e-mail: haeyeon.yang@sdsmt.edu
Get access

Abstract

We report a study of direct laser fabrication that produces quantum dots with their density higher than the critical density without appearance of large clumps. Atomic force microscopy is used to image GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces during epitaxial growth processes.

Keywords

III-Vscanning probe microscopy (SPM)self-assembly
Type
Articles
Information
MRS Advances , Volume 1 , Issue 28: Nanotechnology , 2016 , pp. 2025 - 2030
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Luque, A., Martí, A., The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept, Advanced Materials, 22 (2010) 160–174.CrossRefGoogle ScholarPubMed
Bimberg, D., Grundmann, M., Ledentsov, N.N., Quantum Dot Heterostructures, John Wiley & Sons, New York, 1999.Google Scholar
Shchukin, V., Ledentsov, N.N., Bimberg, D., Epitaxy of Nanostructures, Springer, Berlin, 2003.Google Scholar
Zhou, D., Sharma, G., Thomassen, S.F., Reenaas, T.W., Fimland, B.O., Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy, Applied Physics Letters, 96 (2010) 061913–061913.CrossRefGoogle Scholar
Jo, M., Mano, T., Sakuma, Y., Sakoda, K., Extremely high-density GaAs quantum dots grown by droplet epitaxy, Applied Physics Letters, 100 (2012) 212113.CrossRefGoogle Scholar
Clegg, C.M., Yang, H., Guided assembly of quantum dots through selective laser heating, Solar Energy Materials and Solar Cells, 108 (2013) 252–255.CrossRefGoogle Scholar
Rezek, B., Nebel, C.E., Stutzmann, M., Laser beam induced currents in polycrystalline silicon thin films prepared by interference laser crystallization, Journal of Applied Physics, 91 (2002) 4220–4228.CrossRefGoogle Scholar
Shank, C.V., Schmidt, R.V., Optical technique for producing 0.1-μ periodic surface structures, Applied Physics Letters, 23 (1973) 154–155.CrossRefGoogle Scholar
Savas, T.A., Farhoud, M., Smith, H.I., Hwang, M., Ross, C.A., Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography, Journal of Applied Physics, 85 (1999) 6160–6162.CrossRefGoogle Scholar
Haghizadeh, A., Yang, H., Direct laser fabrication of GaAs nanostructures on GaAs(001) in MBE reactor in-situ, in: SPIE Proceedings, 2015, pp. 93520P-93520P-93528.Google Scholar
Kim, D.J., Yang, H., Shape control of InGaAs nanostructures on nominal GaAs(001): dashes and dots, Nanotechnology, 19 (2008) 475601.CrossRefGoogle ScholarPubMed
Zhao, W., Verhoef, R.W., Asscher, M., Diffusion of potassium on Re(001) investigated by coverage grating-optical second-harmonic diffraction, J. Chem. Phys., 107 (1997) 5554–5560.CrossRefGoogle Scholar