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Green Lithography Using Water-Developable Sugar-Based Negative Resist Materials

Published online by Cambridge University Press:  16 May 2016

Satoshi Takei*
Affiliation:
Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
Makoto Hanabata
Affiliation:
Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
Kigen Sugahara
Affiliation:
Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
Naoto Sugino
Affiliation:
Sanko gosei, Koreyasu Nanto, Toyama 939-1852, Japan
Takao Kameda
Affiliation:
Sanko gosei, Koreyasu Nanto, Toyama 939-1852, Japan
Jiro Fukushima
Affiliation:
Toyama Prefectural Plastic Industries Association, Toyama, Toyama 930-0866, Japan
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Abstract

A water-developable sugar-based negative resist material was developed. This material enables the use of pure water in the development process of electron beam (EB) green lithography instead of conventionally used aqueous alkaline developers and organic solvents. The sugar-based negative resist material was developed by replacing the hydroxyl groups in alpha-linked disaccharides with EB-sensitive 2-methacryloyloxyethyl groups. The sugar-based negative resist material features highly efficient crosslinking and low film thickness shrinkage under EB irradiation. It is demonstrated to be applicable to green lithography with a 100– 500 nm line-and-space pattern and an EB exposure dose of 18 μC/cm2.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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