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Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method

Published online by Cambridge University Press:  21 April 2020

Takumi Ikenoue Open the ORCID record for Takumi Ikenoue [Opens in a new window] ,
Satoshi Yoneya ,
Masao Miyake  and
Tetsuji Hirato
Takumi Ikenoue*
Affiliation:
Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan
Satoshi Yoneya
Affiliation:
Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan
Masao Miyake
Affiliation:
Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan
Tetsuji Hirato
Affiliation:
Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan
*
*(Email: ikenoue.takumi.4m@kyoto-u.ac.jp)
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Abstract

Wide-bandgap oxide semiconductors have received significant attention as they can produce devices with high output and breakdown voltage. p-Type conductivity control is essential to realize bipolar devices. Therefore, as a rare wide-bandgap p-type oxide semiconductor, NiO (3.7 eV) has garnered considerable attention. In view of the heterojunction device with Ga2O3 (4.5–5.0 eV), a p-type material with a large bandgap is desired. Herein, we report the growth of a Ni1-xMgxO thin film, which has a larger bandgap than NiO, on α-Al2O3 (0001) substrates that was developed using the mist chemical vapor deposition method. The Ni1-xMgxO thin films epitaxially grown on α-Al2O3 substrates showed crystallographic orientation relationships identical to those of NiO thin films. The Mg composition of Ni1-xMgxO was easily controlled by the Mg concentration of the precursor solution. The Ni1-xMgxO thin film with a higher Mg composition had a larger bandgap, and the bandgap reached 3.9 eV with a Ni1-xMgxO thin film with x = 0.28. In contrast to an undoped Ni1-xMgxO thin film showing insulating properties, the Li-doped Ni1-xMgxO thin film had resistivities of 101–105 Ω∙cm depending on the Li precursor concentration, suggesting that Li effectively acts as an acceptor.

Keywords

chemical vapor deposition (CVD) (deposition)solution depositionoxideepitaxycrystal growth
Type
Articles
Information
MRS Advances , Volume 5 , Issue 31-32: Fabrication of Functional Materials and Nanomaterials , 2020 , pp. 1705 - 1712
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Copyright
Copyright © Materials Research Society 2020

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