Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-19T14:29:24.893Z Has data issue: false hasContentIssue false

Electronic and Optical Properties Characterization of MoS2 Two-Dimensional Exfoliated nanomaterials

Published online by Cambridge University Press:  21 July 2016

Dalal Fadil
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, El Paso, TX 79969USA
Ridwan H. Fayaz
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, El Paso, TX 79969USA
Anupama B. Kaul*
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, El Paso, TX 79969USA Department of Metallurgical, Materials, and Biomedical Engineering, University of Texas, El Paso, TX 79969USA
*
Get access

Abstract

For optoelectronic application, two-dimensional materials such as molybdenum disulfide (MoS2) are very promising candidate with their interesting electronic and optical properties. The layered structure of these materials makes them amenable to mechanical exfoliation to form scalable 2D atomic crystals. For width range of applications, liquid phase exfoliation using sonication and centrifugation in appropriate solvent is needed. This simple and scalable technique gives high quality of exfoliation of 2D materials without chemical reactions. In this paper, we report an example of the optical and electronic characterizations on MoS2 synthesized by liquid exfoliation in specific solvent.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., and Geim, A. K., “Two-dimensional atomic crystals,” Proceedings of the National Academy of Sciences of the United States of America, vol. 102, no. 30, pp. 10 451–10 453, Jul. 2005.Google Scholar
Kaul, A. B., “Two-dimensional layered materials: Structure, properties, and prospects for device applications,” Journal of Materials Research, vol. 29, pp. 348361, 2014.Google Scholar
Mak, K. F., Lee, C., Hone, J., Shan, J., and Heinz, T. F., “Atomically thin MoS2 : A new Direct-Gap semiconductor,” Physical Review Letters, vol. 105, no. 13, Sep. 2010.Google Scholar
Chernikov, A., van der Zande, A. M., Hill, H. M., Rigosi, A. F., Velauthapillai, A., Hone, J., and Heinz, T. F., “Electrical tuning of exciton binding energies in monolayer WS2,” Physical Review Letters, vol. 115, no. 12, Sep. 2015.CrossRefGoogle Scholar
Koch, S. W., Kira, M., Khitrova, G., and Gibbs, H. M., “Semiconductor excitons in new light,” Nature Materials, vol. 5, no. 7, pp. 523531, Jul. 2006.Google Scholar
Joensen, P., Frindt, R. F., and Morrison, , “Single-layer MoS2,” Materials Research Bulletin, vol. 21, no. 4, pp. 457461, Apr. 1986.CrossRefGoogle Scholar
Backes, C., Smith, R. J., McEvoy, N., Berner, N. C., McCloskey, D., Nerl, H. C., O’Neill, A., King, P. J., Higgins, T., Hanlon, D., Scheuschner, N., Maultzsch, J., Houben, L., Duesberg, G. S., Donegan, J. F., Nicolosi, V., and Coleman, J. N., “Edge and confinement effects allow in situ measurement of size and thickness of liquid-exfoliated nanosheets,” Nature Communications, vol. 5, Aug. 2014.CrossRefGoogle Scholar
Tung, R. T., “Recent advances in Schottky barrier concepts,” Materials Science and Engineering: R: Reports, 35(1), 1138, 2001 Google Scholar