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Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates

Published online by Cambridge University Press:  08 June 2016

Yuya Yamaoka ,
Kazuhiro Ito ,
Akinori Ubukata ,
Toshiya Tabuchi ,
Koh Matsumoto  and
Takashi Egawa
Yuya Yamaoka*
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555, Japan Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba-shi, Ibaraki 300-2611, Japan
Kazuhiro Ito
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555, Japan
Akinori Ubukata
Affiliation:
Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba-shi, Ibaraki 300-2611, Japan
Toshiya Tabuchi
Affiliation:
Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba-shi, Ibaraki 300-2611, Japan
Koh Matsumoto
Affiliation:
Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba-shi, Ibaraki 300-2611, Japan
Takashi Egawa
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555, Japan
*
*(Email: Yuya.Yamaoka@tn-sanso.co.jp)
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Abstract

In this study, the initial AlN layer and the vertical-direction breakdown voltage (VDBV) of AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized. Prior to the formation of the interface between the AlN layer and the Si substrate, only trimethylaluminum (TMA) was introduced without ammonia to control the crystal quality of initial AlN layer (TMA preflow). HEMT structures were simultaneously grown on identical AlN layers on Si substrates (AlN/Si templates) grown using different TMA preflow temperatures. The density of screw- or mixed-type dislocations in the initial AlN layer decreased as the TMA preflow temperature increased. Further, the VDBV of the HEMT structure increased as the TMA preflow temperature increased. It is supposed that the screw- or mixed-type dislocations are the possible source of the vertical leakage current in the HEMT structures. The improvement in the crystal quality of the initial AlN layer affects the increase in the VDBV of the AlGaN/GaN HEMTs on Si substrates.

Keywords

epitaxyIII-Vchemical vapor deposition (CVD) (deposition)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 50: Electronics and Photonics , 2016 , pp. 3415 - 3420
Copyright
Copyright © Materials Research Society 2016 

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References

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