Hostname: page-component-68945f75b7-tmfhh Total loading time: 0 Render date: 2024-08-05T21:50:27.489Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping of boron or nitrogen to multilayered graphene grown on copper by thermal chemical vapor deposition of methane and vapor of phenylboronic acid or melamine

Published online by Cambridge University Press:  01 February 2019

Ryoko Furukawa ,
Yuno Yamamoto ,
Yoji Nabei  and
Shunji Bandow
Ryoko Furukawa
Affiliation:
Department of Applied Chemistry, Meijo University, 1-501 Shiogamaguchi, Tenpaku, Nagoya, Aichi468-8502, Japan
Yuno Yamamoto
Affiliation:
Department of Applied Chemistry, Meijo University, 1-501 Shiogamaguchi, Tenpaku, Nagoya, Aichi468-8502, Japan
Yoji Nabei
Affiliation:
Department of Applied Chemistry, Meijo University, 1-501 Shiogamaguchi, Tenpaku, Nagoya, Aichi468-8502, Japan
Shunji Bandow*
Affiliation:
Department of Applied Chemistry, Meijo University, 1-501 Shiogamaguchi, Tenpaku, Nagoya, Aichi468-8502, Japan
*
*(Email: bandow@meijo-u.ac.jp)
Get access

Abstract

Either boron or nitrogen doped multilayered graphene was prepared by thermal chemical vapor deposition (CVD). Obtained heteroatom doped graphene was examined by Raman scattering, x-ray photo electron spectroscopy (XPS) and temperature dependence of sheet resistance. From the Raman scattering, obvious increase of ID/IG ratio could not be detected by boron doping, while it increased by ∼0.2 or more for nitrogen doped sample. From XPS, doping rates of boron and nitrogen were estimated to be in the range of 5∼12 at% and 1∼2 at%, respectively. XPS also showed that the boron and nitrogen atoms would locate at the doping sites of both graphitic and neighborhood of atomic defect. Magnitude of sheet resistance was decreased by either doping of boron or nitrogen.

Keywords

chemical vapor deposition (CVD) (deposition)grapheneRaman spectroscopyx-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Advances , Volume 4 , Issue 3-4: Nanomaterials , 2019 , pp. 211 - 216
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Castro Neto, A.H., Guinea, F., Peres, N.M.R., Novoselov, K.S. and Geim, A.K., Rev. Mod. Phys. 81, 109 (2009).10.1103/RevModPhys.81.109CrossRefGoogle Scholar
Wei, D., Liu, Y., Wang, Y., Zhang, H., Huang, L. and Yu, G., Nano Lett. 9, 1752 (2009).10.1021/nl803279tCrossRefGoogle Scholar
Guo, B., Liu, Q., Chen, E., Zhu, H., Fang, L. and Gong, J.R., Nano Lett. 10, 4975 (2010).CrossRefGoogle Scholar
Zhang, C., Fu, L., Liu, N., Liu, M., Wang, Y. and Liu, Z., Adv. Mater. 23, 1020 (2011).CrossRefGoogle Scholar
Zhang, J., Li, J., Wang, Z., Wang, X., Feng, W., Zheng, W., Cao, W. and Hu, P.A., Chem. Mater. 26, 2460 (2014).10.1021/cm500086jCrossRefGoogle Scholar
Capasso, A., Dikonimos, T., Sarto, F., Tamburrano, A., Bellis, G.D., Sarto, M.S., Faggio, G., Malara, A., Messina, G. and Lisi, N., Beilstein J. Nanotechnol. 6, 2028 (2015).10.3762/bjnano.6.206CrossRefGoogle Scholar
Bandow, S. and Yoshida, T., Appl. Phys. A 123, 728 (2017).10.1007/s00339-017-1356-9CrossRefGoogle Scholar
Zhu, Q., Yu, J., Zhang, W., Dong, H. and Dong, L., J. Renew. Sustain. Energy 5, 021408 (2013)Google Scholar
Wang, H., Zhou, Y., Wu, D., Liao, L., Zhao, S., Peng, H., Liu, Z., Small 9, 1316 (2013).CrossRefGoogle ScholarPubMed
Gebhardt, J., Koch, R.J., Zhao, W., Höfert, O., Gotterbarm, K., Mammadov, S., Papp, C., Görling, A., Steinrück, H.-P. and Seyller, Th., Phys. Rev. B 87, 155437 (2013).10.1103/PhysRevB.87.155437CrossRefGoogle Scholar
Lv, R., Chen, G., Li, Q., McCreary, A., Botello-Méndez, A., Morozov, S.V., Liang, L., Declerck, X., Perea-López, N., Cullen, D. A., Feng, S., Elías, A.L., Cruz-Silva, R., Fujisawa, K., Endo, M., Kang, F., Charlier, J.-C., Meunier, V., Pan, M., Harutyunyan, A.R., Novoselov, K.S. and Terrones, M., PNAS 112, 14527 (2015).CrossRefGoogle Scholar
Bandow, S., Rao, A.M., Sumanasekera, G.U., Eklund, P.C., Kokai, F., Takahashi, K., Yudasaka, M., Iijima, S., Appl. Phys. A 71, 561 (2000).10.1007/s003390000681CrossRefGoogle Scholar
D Wagner, C., Riggs, W.M., E Davis, L., F Moulder, J., Muilenberg, G.E., Hand book of X-ray Photoelectron spectroscopy, (Perkin-Elmer Corporation, Eden Prairie, MN, 1979) p.188.Google Scholar