Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-27T03:54:09.395Z Has data issue: false hasContentIssue false
  • English
  • Français

Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication

Published online by Cambridge University Press:  11 June 2020

James N. Pan
James N. Pan*
Affiliation:
Advanced Enterprise and License Company (AELC), Linthicum, Maryland21090, USA
*
Email: nan-hsi.pan@ngc.com
Get access

Abstract

Traditionally, CMOS transistors are for low power, high speed, and high packing density applications. CMOS is also commonly used as power regulating devices, and light sensors (CCD or CMOS image sensors). In this paper, we would like to introduce Photonic CMOS as a light emitting device for optical computing, ASIC, power transistors, and ultra large scale integration (ULSI). A Photonic CMOS Field Effect Transistor is fabricated with a low-resistance laser or LED in the drain region, and multiple photon sensors in the channel / well regions. The MOSFET, laser, and photon sensors are fabricated as one integral transistor. With embedded nonlinear optical films, the Photonic CMOSFETs have the capability of detecting and generating focused laser beams of various frequencies to perform optical computing, signal modulation, polarization, and multiplexing for digital / analog processing and communication.

Type
Articles
Information
MRS Advances , Volume 5 , Issue 37-38: Electronics and Photonics , 2020 , pp. 1965 - 1974
Check for updates
Copyright
Copyright © Materials Research Society 2020

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Pan, J., Optoelectronic CMOS Transistors: Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories, and Power MOSFETs. MRS Advances © 2019 MRS Society.Google Scholar
Pan, J., Techniques to Achieve Low Series Resistance, High Photon Absorption Rate, and High Quantum Efficiency for Photonic CMOS Field Effect Transistors. SPIE Photonics West, San Francisco, California, U.S.A. February 2020.CrossRefGoogle Scholar
Auth, D., Passive Mode-Locking of P-Doped Monolithic Semiconductor Quantum Dots Lasers Emitting at 1250nm. SPIE Photonics West, San Francisco, California, U.S.A. February 2020.Google Scholar
Cutting Edge Optronics, Communicatons from Northrop Grumman Corporation.Google Scholar
Tassev, V., Growth and Study of Nonlinear Optical Materials for Frequency Conversion Devices with Applications in Defense and Security. SPIE Proceedings, Volume 9253.Google Scholar
Engel, A., Detection Mechanism in SNSPD: Numerical Results of a Conceptually Simple, yet Powerful Detection Model. Applied Superconductivity Conference Special Issue, October 31, 2014.Google Scholar
Saito, Y., Second Harmonic Generation in Nb2O5 Thin-Film Optical Waveguide Deposited on LiTaO3 Substrate by RF Magnetron Sputtering, Jpn. J. Appl. Phys. Vol. 31 (1992) pp. 3164–3169. Part 1, No. 9B, September 1992.CrossRefGoogle Scholar
Mason, P., Review of the development of nonlinear materials for mid-IR generation, SPIE Security + Defence, 2008, Cardiff, Wales, United KingdomCrossRefGoogle Scholar
Wang, L., Type I phase matching in thin film of lithium niobate on insulator, Results in Physics 16 (2020).CrossRefGoogle Scholar
VanDerVoom, P., A 32nm Low Power RF CMOS SOC Technology Featuring High-k/Metal Gate, 2010 Symposium on VLSI Technology Digest of Technical Papers.Google Scholar