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Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics

Published online by Cambridge University Press:  10 May 2016

Roberta Nipoti ,
Giovanna Sozzi ,
Maurizio Puzzanghera  and
Roberto Menozzi
Roberta Nipoti*
Affiliation:
CNR-IMM of Bologna, via Gobetti 101, I-4038 Bologna, Italy
Giovanna Sozzi
Affiliation:
University of Parma, Dipartimento di Ingegneria dell'Informazione, Parco Area della Scienza 181/A, I-43124 Parma, Italy.
Maurizio Puzzanghera
Affiliation:
University of Parma, Dipartimento di Ingegneria dell'Informazione, Parco Area della Scienza 181/A, I-43124 Parma, Italy.
Roberto Menozzi
Affiliation:
University of Parma, Dipartimento di Ingegneria dell'Informazione, Parco Area della Scienza 181/A, I-43124 Parma, Italy.
*
*(Email: nipoti@bo.imm.cnr.it)
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Abstract

The temperature dependence of the forward and reverse current voltage characteristics of circular Al+ implanted 4H-SiC p-i-n vertical diodes of various diameters, post implantation annealed at 1950 °C/5 min, have been used to obtain the thermal activation energies of the defects responsible of the generation and the recombination currents, as well as the area and the periphery current component of the current voltage characteristics. The former have values compatible with those of the traps associated to the carbon vacancy defect in 4H-SiC. The hypothesis that only these traps may justify the trend of the current voltage characteristics of the studied diodes has been tested by simulations in a Synopsys Sentaurus TCAD suite.

Keywords

annealingelectronic materialsimulation
Type
Articles
Information
MRS Advances , Volume 1 , Issue 54: Electronics and Photonics , 2016 , pp. 3637 - 3642
Copyright
Copyright © Materials Research Society 2016 

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References

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