Hostname: page-component-7479d7b7d-pfhbr Total loading time: 0 Render date: 2024-07-11T09:22:05.883Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermoelectric Performance Study of Graphene Antidot Lattices on Different Substrates

Published online by Cambridge University Press:  11 August 2017

Qing Hao ,
Dongchao Xu ,
Ximena Ruden ,
Brian LeRoy  and
Xu Du
Qing Hao*
Affiliation:
Department of Aerospace & Mechanical Engineering, University of Arizona, 1130 N Mountain Avenue, Tucson, AZ 85721, U.S.A.
Dongchao Xu
Affiliation:
Department of Aerospace & Mechanical Engineering, University of Arizona, 1130 N Mountain Avenue, Tucson, AZ 85721, U.S.A.
Ximena Ruden
Affiliation:
Department of Physics, University of Arizona, 1118 E. 4th Street, Tucson, AZ 85721, U.S.A.
Brian LeRoy
Affiliation:
Department of Physics, University of Arizona, 1118 E. 4th Street, Tucson, AZ 85721, U.S.A.
Xu Du*
Affiliation:
Department of Physics, Stony Brook University, Stony Brook, NY 11794, U.S.A.
*
*(Email: qinghao@email.arizona.edu)
Get access

Abstract

Pristine graphene has low thermoelectric performance due to its ultra-high thermal conductivity and a low Seebeck coefficient, the latter of which results from the zero-band gap of graphene. To improve the thermoelectric performance of graphene-based materials, various methods have been proposed to open a band gap in graphene. Graphene antidot lattices is one of the most effective methods to reach this goal by patterning periodic nano- or sub-1-nm pores (antidots) across graphene. In high-porosity graphene antidot lattices, charge carriers mainly flow through the narrow necks between pores, forming a comparable case as graphene nanoribbons. This will open a geometry-dependent band gap and dramatically increase the Seebeck coefficient. The antidots also strongly scatter phonons, leading to a dramatically reduced lattice thermal conductivity to further enhance the thermoelectric performance. In computations, the thermoelectric figure of merit of a graphene antidot lattices was predicted to be around 1.0 at 300 K but experimental validation is still required. The electrical conductivity and Seebeck coefficient of graphene antidot lattices on various substrates including SiO2, SiC and hexagonal boron nitride were measured. The antidots were drilled with a focused ion beam or reactive ion etching.

Keywords

thermoelectricelectrical propertiesnanostructure
Type
Articles
Information
MRS Advances , Volume 2 , Issue 58-59: Nanomaterials , 2017 , pp. 3645 - 3650
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

Goldsmid, H. J., Thermoelectric Refrigeration. (Plenum, New York, 1964).Google Scholar
Yang, J. and Stabler, F. R., Journal of Electronic Materials 38 (7), 1245–1251 (2009).CrossRefGoogle Scholar
Kraemer, D., Poudel, B., Feng, H. P., Caylor, J. C., Yu, B., Yan, X., Ma, Y., Wang, X., Wang, D., Muto, A., McEnaney, K., Chiesa, M., Ren, Z. and Chen, G., Nature Materials 10 (7), 532–538 (2011).CrossRefGoogle Scholar
Novoselov, K. S., Geim, A. K., Morozov, S., Jiang, D., Zhang, Y., Dubonos, S., Grigorieva, I. and Firsov, A., Science 306 (5696), 666-669 (2004).Google Scholar
Novoselov, K., Geim, A. K., Morozov, S., Jiang, D., Grigorieva, M. K. I., Dubonos, S. and Firsov, A., Nature 438 (7065), 197-200 (2005).CrossRefGoogle Scholar
Jariwala, D., Srivastava, A. and Ajayan, P. M., Journal of Nanoscience and Nanotechnology 11 (8), 6621–6641 (2011).Google Scholar
Yan, Y., Liang, Q.-F., Zhao, H., Wu, C.-Q. and Li, B., Physics Letters A 376 (35), 2425–2429 (2012).Google Scholar
Karamitaheri, H., Pourfath, M., Faez, R. and Kosina, H., Journal of Applied Physics 110 (5), 054506 (2011).Google Scholar
Gunst, T., Markussen, T., Jauho, A.-P. and Brandbyge, M., Physical Review B 84 (15), 155449 (2011).CrossRefGoogle Scholar
Gunst, T., Jing-Tao, L., Markussen, T., Jauho, A. and Brandbyge, M., presented at the 2012 15th International Workshop on Computational Electronics (IWCE), Madison, USA, 2012 (unpublished).Google Scholar
Wu, D., Yu, Z., Xiao, J. and Ouyang, F., Physica E: Low-dimensional Systems and Nanostructures 43 (1), 33–39 (2010).CrossRefGoogle Scholar
Zhang, H., Guo, Z.-X., Zhao, W., Gong, X. and Cao, J., Journal of the Physical Society of Japan 81 (11), 114601 (2012).Google Scholar
Robillard, J., Muralidharan, K., Bucay, J., Deymier, P., Beck, W. and Barker, D., Chinese Journal of Physics 49, 448–461 (2011).Google Scholar
Grosse, K. L., Bae, M.-H., Lian, F., Pop, E. and King, W. P., Nature Nanotechnology 6 (5), 287–290 (2011).Google Scholar
Oh, J., Yoo, H., Choi, J., Kim, J. Y., Lee, D. S., Kim, M. J., Lee, J.-C., Kim, W. N., Grossman, J. C., Park, J. H., Lee, S.-S., Kim, H. and Son, J. G., Nano Energy 35, 26–35 (2017).Google Scholar
Zhu, W., Low, T., Perebeinos, V., Bol, A. A., Zhu, Y., Yan, H., Tersoff, J. and Avouris, P., Nano Letters 12 (7), 3431–3436 (2012).Google Scholar
Sandner, A., Preis, T., Schell, C., Giudici, P., Watanabe, K., Taniguchi, T., Weiss, D. and Eroms, J., Nano Letters 15 (12), 8402–8406 (2015).Google Scholar
Yagi, R., Sakakibara, R., Ebisuoka, R., Onishi, J., Watanabe, K., Taniguchi, T. and Iye, Y., Physical Review B 92 (19), 195406 (2015).CrossRefGoogle Scholar
Goldsmid, H. J., Introduction to Thermoelectricity. (Springer, Berlin, 2010).Google Scholar