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Impact of Layer Number on Flexible High-Voltage Nanostructured Solar Cells

Published online by Cambridge University Press:  02 February 2016

Roger E. Welser*
Magnolia Solar, Inc., 251 Fuller Road, CESTM-B250, Albany, NY 12203 Magnolia Optical Technologies, Inc., 52-B Cummings Park, Suite 314, Woburn, MA 01801
Ashok K. Sood
Magnolia Solar, Inc., 251 Fuller Road, CESTM-B250, Albany, NY 12203 Magnolia Optical Technologies, Inc., 52-B Cummings Park, Suite 314, Woburn, MA 01801
S. Rao Tatavarti
MicroLink Devices, Inc., 6457 W. Howard Street, Niles, IL 60048
Andree Wibowo
MicroLink Devices, Inc., 6457 W. Howard Street, Niles, IL 60048
David M. Wilt
Air Force Research Laboratory, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117
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Nanostructured quantum well and quantum dot solar cells are being widely investigated as a means of extending infrared absorption and enhancing photovoltaic device performance. In this work, we describe the impact of nanostructured layer number on the performance of flexible, highvoltage InGaAs/GaAs quantum well solar cells. Multiple quantum well structures are observed to have a higher short circuit current but a lower open circuit voltage than similar single quantum well structures. Analysis of the underlying dark diode characteristics indicate that these highvoltage structures are limited by radiative recombination at high bias levels. The results of this study suggest that future development efforts should focus on maximizing the current generating capability of a limited number of nanostructured layers and minimizing recombination within the nanostructured absorber.

Copyright © Materials Research Society 2016 

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