Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-27T04:11:13.501Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

Published online by Cambridge University Press:  27 December 2016

S. Ishihara ,
Y. Hibino ,
N. Sawamoto ,
T. Ohashi ,
K. Matsuura ,
H. Machida ,
M. Ishikawa ,
H. Sudo ,
H. Wakabayashi  and
A. Ogura
S. Ishihara*
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan. Research Fellow of the Japan Society for the Promotion of Science, 5-3-1, Kojimachi, Chiyoda-ku, Tokyo, 102-0083, Japan.
Y. Hibino
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
N. Sawamoto
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
T. Ohashi
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
K. Matsuura
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
H. Machida
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
M. Ishikawa
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
H. Sudo
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
H. Wakabayashi
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
A. Ogura
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
*
*(Email: s_ishihara@meiji.ac.jp)
Get access

Abstract

Molybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.

Keywords

chemical vapor deposition (CVD) (chemical reaction)x-ray photoelectron spectroscopy (XPS)transmission electron microscopy (TEM)
Type
Articles
Information
MRS Advances , Volume 2 , Issue 29: Nanomaterials , 2017 , pp. 1533 - 1538
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., and Kis, A., Nat. Nanotechnol. 6, 147 (2011).CrossRefGoogle Scholar
Yu, Y., Li, C., Liu, Y., Su, L., Zhang, Y., and Cao, L., Sci. Rep. 3, 1866 (2013).CrossRefGoogle Scholar
Ji, Q., Zhang, Y., Zhang, Y., and Liu, Z., Chem. Soc. Rev. 44, 2587 (2015).CrossRefGoogle Scholar
Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M., and Lou, J., Small 8, 966 (2012).CrossRefGoogle Scholar
Lee, Y. H., Zhang, X. Q., Zhang, W., Chang, M. T., Lin, C. T., Chang, K. D., Yu, Y. C., Wang, J. T. W., Chang, C. S., Li, L.-J., and Lin, T.-W., Adv. Mater. 24, 2320 (2012).CrossRefGoogle Scholar
Ishihara, S., Suda, K., Hibino, Y., Sawamoto, N., Ohashi, T., Matsuura, K., Machida, H., Ishikawa, M., Sudoh, H., Wakabayashi, H., and Ogura, A., Jpn. J. Appl. Phys. 55, 06GF01 (2016).CrossRefGoogle Scholar
Ishihara, S., Suda, K., Hibino, Y., Sawamoto, N., Ohashi, T., Matsuura, K., Machida, H., Ishikawa, M., Sudoh, H., Wakabayashi, H., and Ogura, A., Jpn. J. Appl. Phys. 55, 04EJ07 (2016).CrossRefGoogle Scholar
Ishihara, S., Suda, K., Hibino, Y., Sawamoto, N., Ohashi, T. Matsuura, K., Machida, H., Ishikawa, M., Wakabayashi, H., and Ogura, A., ECS J. Solid State Sci. Technol. 5, Q3012 (2016).CrossRefGoogle Scholar
Ishihara, S., Suda, K., Hibino, Y., Sawamoto, N., Ohashi, T., Yamaguchi, S., Matsuura, K., Machida, H., Ishikawa, M., Sudoh, H., Wakabayashi, H., and Ogura, A., MRS Proc. 1781, mrss15–2133709 (2015).CrossRefGoogle Scholar
Lide, D. R., CRC Handbook of Chemistry and Physics, 84th ed. (CRC Press, Florida, 2003) p. 6–65.Google Scholar
Mark, H. F., McKetta, J. J. Jr., and Othmer, D. F., Kirk-Othmer Encyclopedia of Chemical Technology, 2nd ed. (John Wiley & Sons, Inc., New York, 1969) p. 375–389.Google Scholar
Firefly version 8. Available at: http://classic.chem.msu.su/gran/firefly/index.html. (accessed 28 May 2016).Google Scholar
Schmidt, M. W., Baldridge, K. K., Boatz, J. A., Elbert, S. T., Gordon, M. S., Jensen, J. H., Koseki, S., Matsunaga, N., Nguyen, K. A., Su, S., Windus, T. L., Dupuis, M., and Montgomery, J. A., J. Comput. Chem. 14, 1347 (1993).CrossRefGoogle Scholar
Li, H., Zhang, Q., Yap, C. C. R., Tay, B. K., Edwin, T. H. T., Olivier, A., and Baillargeat, D., Adv. Funct. Mater. 22, 1385 (2012).CrossRefGoogle Scholar