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Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

Published online by Cambridge University Press:  27 December 2016

S. Ishihara
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan. Research Fellow of the Japan Society for the Promotion of Science, 5-3-1, Kojimachi, Chiyoda-ku, Tokyo, 102-0083, Japan.
Y. Hibino
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
N. Sawamoto
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
T. Ohashi
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
K. Matsuura
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
H. Machida
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
M. Ishikawa
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
H. Sudo
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
H. Wakabayashi
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
A. Ogura
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
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Abstract

Molybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.

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Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor
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