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Dependence of structural and optoelectronic properties on thickness of γ-cui thin films deposited by vacuum thermal evaporation

Published online by Cambridge University Press:  28 March 2018

Lawrence K. Dintle ,
Pearson V.C. Luhanga ,
Charles Moditswe  and
Cosmas M. Muiva
Lawrence K. Dintle*
Affiliation:
Department of Physics, University of Botswana, Private Bag UB0704, Gaborone, Botswana
Pearson V.C. Luhanga
Affiliation:
Department of Physics, University of Botswana, Private Bag UB0704, Gaborone, Botswana
Charles Moditswe
Affiliation:
Department of Physics and Astronomy, Botswana International University of Science and Technology, Private Bag 16, Palapye, Botswana
Cosmas M. Muiva
Affiliation:
Department of Physics and Astronomy, Botswana International University of Science and Technology, Private Bag 16, Palapye, Botswana
*
*Corresponding author: Email address: dintlel@ub.ac.bw, aldintle@yahoo.com (Dintle L.)
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Abstract

We report on the formation of gamma phase cuprous iodide (CuI) thin films of various film thickness with high (111) orientation deposited by vacuum thermal evaporation of powders attained through a cost-saving extraction method. The study investigated the dependence of structural and optoelectronic properties of the thin films on film thickness. Structural characterisation of the films revealed an increase in crystallite size and a decrease in dislocation density with film thickness which indicated an improvement in the crystallographic microstructure. There was a strong orientation towards (111) growth. The Scanning Electron Microscope images of the CuI thin films showed a compact morphology with an increase in larger grains as film thickness increased. The thin films showed a mean optical transmittance of around 70 % in the visible region with a decreasing trend as thickness increased. There was an observed red shift of the transmittance spectra with film thickness. All thin films also showed good electrical conductivity. However, the figure of merit improved with decreasing thickness. The good optical transmittance and relatively low resistivity qualify the CuI thin films as candidates for electro-optical device applications.

Keywords

optical propertieselectrical propertiessemiconductingthin filmchemical synthesis
Type
Articles
Information
MRS Advances , Volume 3 , Issue 42-43: African Materials Research Society 2017 , 2018 , pp. 2627 - 2642
Copyright
Copyright © Materials Research Society 2018 

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