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Degradation Process in Pentacene-Based Organic Field-Effect Transistors Evaluated by Three-Terminal Capacitance-Voltage Measurements

Published online by Cambridge University Press:  20 February 2017

Yuya Tanaka*
Affiliation:
Center for Frontier Science, Chiba University, Chiba 263-8522, Japan. Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan.
Kohei Yamamoto
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan.
Yutaka Noguchi
Affiliation:
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan.
Hisao Ishii
Affiliation:
Center for Frontier Science, Chiba University, Chiba 263-8522, Japan. Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan. Molecular Chirality Research Center, Chiba University, Chiba 263-8522, Japan.
*
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Abstract

By taking advantage of three-terminal capacitance-voltage (TT-CV) measurement, we investigated a formation of trapped charge in pentacene(Pn)-based organic field-effect transistors (OFETs) during the bias stress measurement. The shift of the turn-on voltage in transfer curve correlated well with the increase of trapped charge estimated from TT-CV curves. Moreover, TT-CV measurement revealed that the trapped charges were distributed inhomogeneously at the vicinity of the pentacene/insulator interface, indicating that the current does not obviously affect their formation. Thus we suggested that the trapped charges are formed by keeping Pn molecules as unstable cation (hole state) by the prolonged bias stress.

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Articles
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Horowitz, G., Adv. Mater. 10, 365 (1998).Google Scholar
Dimitrakopoulos, C. D., Adv. Mater. 14, 99 (2002).3.0.CO;2-9>CrossRefGoogle Scholar
Sirringhaus, H., Adv. Mater. 26, 1319 (2014).Google Scholar
Ebisawa, F., Kurokawa, T., Nara, S., J. Appl. Phys. 54, 3255 (1983).CrossRefGoogle Scholar
Kudo, K., Yamashina, M., Moriizumi, T., Jpn. J. Appl. Phys. 23, 130 (1984).CrossRefGoogle Scholar
Tsumura, A., Koezuka, H., Ando, T., Appl. Phys. Lett. 49, 1210 (1986).CrossRefGoogle Scholar
Veres, J., Ogier, S., Lloyd, G., Leeuw, D., Chem. Mater. 16, 4543 (2004).Google Scholar
Facchetti, A., Yoon, M.-H., Marks, T. J., Adv. Mater. 17, 1705, (2005).Google Scholar
Dong, H., Fu, X., Liu, J., Wang, Z., Hu, W., Adv. Mater. 25, 6158 (2013).CrossRefGoogle Scholar
Sirringhaus, H., Adv. Mater. 21, 3859 (2009).CrossRefGoogle Scholar
Lee, W. H., Choi, H. H., Kim, D. H., Cho, K., Adv. Mater. 26, 1660 (2014).Google Scholar
Pernstich, K. P., Haas, S., Oberhoff, D., Goldmann, C., Gundlach, D. J., Batlogg, B., Rashid, A. N., Schitter, G., J. Appl. Phys. 96, 6431 (2004).Google Scholar
Goldmann, C., Krellner, C., K. P. 12, Haas, S., Gundlach, D. J., Batlogg, B., J. Appl. Phys. 99, 034507 (2006).Google Scholar
Ryu, K. K., He, D. D., bulović, V., Sodini, C. G., IEEE Trans. Electron Devices 57, 1003 (2010).Google Scholar
Scheinert, S., Schliefke, W., Synth. Met. 139, 501 (2003).Google Scholar
Hamadani, B. H., Richter, C. A., Suehle, J. S., Gundlach, D. J., Appl. Phys. Lett. 92, 203303 (2008).Google Scholar
Tanaka, Y., Noguchi, Y., Kraus, M., Brütting, W., Ishii, Hisao, Org. Electron. 12, 1560 (2011).Google Scholar
Ogawa, S., Kimura, Y., Ishii, H., Niwano, M., Jpn. J. Appl. Phys. 42, L1275 (2003).Google Scholar
Ogawa, S., Naijo, T., Kimura, Y., Ishii, H., Niwano, M., Appl. Phys. Lett. 86, 252104 (2005).CrossRefGoogle Scholar
Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981).Google Scholar
Tanaka, Y., Noguchi, Y., Kraus, M., Brütting, W., Ishii, H., Proc. SPIE 8117, 811713 (2011).Google Scholar
Tanaka, Y., Noguchi, Y., Ishii, H., Mater. Res. Soc. Symp. Proc. 1287, 45 (2011).CrossRefGoogle Scholar
Tanaka, Y., Noguchi, Y., Kraus, M., Brütting, W., Ishii, H., Org. Electron. 14, 2491 (2013).Google Scholar
Kraus, M., Rihler, S., Opitz, A., Brütting, W., Haas, S., Hasegawa, T., Hinderhofer, A., Schreiber, F., J. Appl. Phys. 107, 094503 (2010).Google Scholar
Kraus, M., Haug, S., Brütting, W., Opitz, A., Org. Electron. 12, 731 (2011).Google Scholar