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The Total Release Method for FIB In-Situ TEM Sample Preparation

Published online by Cambridge University Press:  14 March 2018

T.M. Moore
T.M. Moore*
Affiliation:
Omniprobe, Inc., DallasTX
*
moore@omniprobe.co

Extract

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In 1965, Gordon Moore forecast that the microprocessor industry would continually scale to smaller feature sizes and the number of transistors would double every 18 months. Scaling below the 100nm node, combined with the implementation of copper and low dielectric constant insulators to increase the processor speed, has produced the situation in which SEM inspection no longer offers suitable resolution to image key artifacts and structures. The transmission electron microscope (TEM), once considered more of a development tool, is now in the forefront for process control and failure analysis, especially for measurements such as the thickness of semiconductor device non-planar barrier and seed layers

Type
Research Article
Information
Microscopy Today , Volume 13 , Issue 4 , July 2005 , pp. 40 - 43
Copyright
Copyright © Microscopy Society of America 2005

References

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[3] Ohnishi, T. et al., U.S. Patent 5270552.Google Scholar
[4] Moore, T.M. et al., U.S. Patent 6420722.Google Scholar
[5] Moore, T.M., U.S. Patent 6570170.Google Scholar
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[8]Omniprobe AutoSense™ probe shaft, patent pending.Google Scholar
[9]Omniprobe Short-Cut™ system, patent pending.Google Scholar
[10]The authors wish to thank to Amador, G., Hartfield, C.D. and Kruger, R. for their dedicated efforts.Google Scholar