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Thickness Measurement of Focused Ion Beam Thinned Silicon Crystals Using Convergent Beam.Electron Diffraction and Electron Energy Loss Spectroscopy.

Published online by Cambridge University Press:  02 July 2020

D. Delille ,
R. Pantel ,
G. Auvert  and
E. Van Cappellen
D. Delille
Affiliation:
Philips Optique Electronique; BP 45, F- 94454 Limeil, Brevannes, France.
R. Pantel
Affiliation:
France Telecom-CNET; BP 98, F- 38243, Meylan, France.
G. Auvert
Affiliation:
France Telecom-CNET; BP 98, F- 38243, Meylan, France.
E. Van Cappellen
Affiliation:
FEI Company; N.W. Evergreen Parkway, Hillsboro, Oregon97124-5830, USA
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Extract

1. Introduction

The FIB (focused ion beam) is now widely accepted as the most site-specific TEM preparation tool and as such proves to be highly valuable when analysing ULSI devices. However, using high-energy Gallium ions for milling induces amorphization of the crystal surfaces. A method able to quantify this surface alteration on silicon using a combination of CBED (convergent beam electron diffraction) and EELS (electron energy loss spectroscopy) is presented. CBED is a powerful tool that also can generate an accurate measure of crystal thickness. EELS can yield the total sample thickness, so from the difference the combined amorphous layers can be assessed. Two sets of application results are presented: the first one is obtained on a FIB thinned sample using an ion energy of 50 keV and the second set of results confirms the validity of the proposed method on a mechanically polished specimen with no subsequent ion milling.

Type
Precision Specimen Preparation
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 898 - 899
Copyright
Copyright © Microscopy Society of America

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References

1.)Venables, D.et al., Characterization and metrology for ULSI Technology: 1998 International Conference, The American Institute of Physics (1998) 667CrossRefGoogle Scholar
2.)Kelly, P.M.et al., Phys. Stat. Sol. A31 (1975) 771CrossRefGoogle Scholar
3.)Allen, S.M., Phil. Mag. A43 (1981) 325CrossRefGoogle Scholar
4.)Malis, T.et al., Journal of Electron Microscopy Technique 8 (1988) 193CrossRefGoogle Scholar