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Structure of Low- And High-Angle Grain Boundaries In YBCO/MgO Films

Published online by Cambridge University Press:  02 July 2020

S. Oktyabrsky
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-7916
R. Kalyanaraman
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-7916
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-7916
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Grain boundaries (GBs) in laser deposited YB2Cu3O7-δ/MgO(001) thin films have been investigated by high-resolution transmission electron microscopy (TEM) and scanning TEM (STEM). We report both statistics and atomic structure of low-angle and high-angle [001] tilt grain boundaries resulting from almost perfect c-axis textured YBCO films.

Atomic structure of low-angle GBs was analyzed using a dislocation model. These boundaries have been found to be aligned primarily along (100) and (110) interface planes. For (100) boundary plane, the GB consists of a periodic array of [100] dislocations (Fig.l). For (110) boundary plane, the array is also periodic but every [110] dislocation is split by ∼ 1.5 nm into two [100] and [010] dislocations (Fig.2). We have calculated energy of various configurations and shown that the energy of the (110) boundary with dissociated dislocations is comparable to that of (100) boundary, which explains the coexistence of (100) and (110) interface facets along the boundary.

Type
Microscopy of Semiconducting and Superconducting Materials
Copyright
Copyright © Microscopy Society of America

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References

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