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Strain Engineering in Aluminum Scandium Nitride Thin Film using Four-dimensional Scanning Transmission Electron Microscopy (4D-STEM) Technique
Published online by Cambridge University Press: 30 July 2021
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- Type
- Diffraction Imaging Across Disciplines
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- Copyright
- Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America
References
Fichtner, S.; Wolff, N.; Lofink, F.; Kienle, L.; Wagner, B. AlScN: A III-V Semiconductor Based Ferroelectric. J. Appl. Phys. 2019, 125 (11). https://doi.org/10.1063/1.5084945.Google Scholar
Ophus, C. Four-Dimensional Scanning Transmission Electron Microscopy (4D-STEM): From Scanning Nanodiffraction to Ptychography and Beyond. Microsc. Microanal. 2019, 25 (3), 563–582. https://doi.org/10.1017/S1431927619000497.CrossRefGoogle ScholarPubMed